Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-
semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride …

Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate,
and surface passivation | Journal of Applied Physics | AIP Publishing Skip to Main Content …

In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

We report on an Al 2 O 3/AlGaN/GaN metalinsulator-semiconductor high-electron-mobility
transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After …

Effective interface trap characterization approaches are indispensable in the development of
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …

To investigate current linearity and operation stability of metal–oxide–semiconductor (MOS)
AlGaN/GaN high electron mobility transistors (HEMTs), we have fabricated and …

This paper presents electrical characterization of Al 2 O 3/AlGaN/GaN metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs) grown on GaN substrates …

Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …

With the development of energy efficiency technologies such as 5G communication and
electric vehicles, Si-based GaN microelectronics has entered a stage of rapid …