Phonons, ie, quanta of lattice vibrations, manifest themselves practically in all electrical,
thermal, optical, and noise phenomena in semiconductors and other material systems …

We present a Raman scattering study of wurtzite ZnO over a temperature range from 80 to
750 K. Second-order Raman features are interpreted in the light of recent ab initio phonon …

This book focuses on the theory of phonon interactions in nanoscale structures with
particular emphasis on modern electronic and optoelectronic devices. The continuing …

The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …

We have conducted an experimental and theoretical study on first-and second-order Raman
scattering of zinc blende and wurtzite ZnS. Based on the calculated phonon band structure …

Raman analyses of the lifetimes of phonons in GaN and AlN crystallites of wurtzite structure
are presented. In order to ensure the accuracy of the measurement of the phonon lifetimes …

Research advances in III-nitride semiconductor materials and device have led to an
exponential increase in activity directed towards electronic and optoelectronic applications …

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively
investigated materials due to its large range of applications, both in the amorphous and …

Dispersion relations for polar optical phonon modes in wurtzite quantum wells (QW's) are
obtained in the framework of the dielectric continuum model. It is found that anisotropy of the …

Based on the dielectric-continuum model and Loudon's uniaxial crystal model, the equation
of motion for the p-polarization field in an arbitrary wurtzite multilayer heterostructure is …