Study on an S-band rectenna array for wireless microwave power transmission
W Huang, B Zhang, X Chen, KM Huang… - Progress In …, 2013 - jpier.org
The microwave power transmission is an approach for wireless power transmission. As an
important component of a microwave wireless power transmission systems, microwave …
important component of a microwave wireless power transmission systems, microwave …
[HTML][HTML] Accurately modeling of zero biased Schottky-diodes at millimeter-wave frequencies
J Gutiérrez, K Zeljami, T Fernández, JP Pascual… - Electronics, 2019 - mdpi.com
This paper presents and discusses the careful modeling of a Zero Biased Diode, including
low-frequency noise sources, providing a global model compatible with both wire bonding …
low-frequency noise sources, providing a global model compatible with both wire bonding …
Experimental studies of the frequency dependence of the low-barrier mott diode impedance
NV Vostokov, VI Shashkin - IEEE Transactions on Electron …, 2016 - ieeexplore.ieee.org
We study the microwaave impedance of low-barrier Mott diodes with a δ-doped layer near
the metal contact. Parameters of the elements of the diode equivalent circuit are determined …
the metal contact. Parameters of the elements of the diode equivalent circuit are determined …
Comparison of microstrip W-band detectors based on zero bias Schottky-diodes
J Gutiérrez, K Zeljami, JP Pascual, T Fernández… - Electronics, 2019 - mdpi.com
This paper presents and discusses three different low-cost microstrip implementations of
Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from …
Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from …
[KNIHA][B] Modelling and characterisation of terahertz planar Schottky diodes
AY Tang - 2013 - search.proquest.com
This thesis deals with the modelling and characterisation of THz planar Schottky diodes,
focusing on analyses of geometry-dependent electrical parasitics and the thermal …
focusing on analyses of geometry-dependent electrical parasitics and the thermal …
A decade bandwidth mixers based on planar transformers and quasi-vertical Schottky diodes implemented in GaAs MMIC technology
N Drobotun, D Danilov… - 2020 50th European …, 2021 - ieeexplore.ieee.org
This paper presents a decade bandwidth passive double balanced mixers implemented in
GaAs MMIC technology. The mixers employ ultra-broadband coupled balun transformers …
GaAs MMIC technology. The mixers employ ultra-broadband coupled balun transformers …
Large-signal Metal-Insulator-Graphene diode model on a flexible substrate for microwave application
In this paper, a metal-insulator-graphene (MIG) diode is designed, fabricated, and modelled.
The MIG diode is realized on a 50 μm-Kapton substrate based on graphene material grown …
The MIG diode is realized on a 50 μm-Kapton substrate based on graphene material grown …
[HTML][HTML] 一种基于子阵分解的高效整流天线阵列
张鹤馨, 刘长军 - 2016 - html.rhhz.net
针对微波无线能量传输系统中接收端功率密度非均匀分布, 提出了一种高效的子阵分解微波整流
天线. 通过研究接收天线阵列功率密度分布规律, 设计了针对不同最佳功率点的整流电路 …
天线. 通过研究接收天线阵列功率密度分布规律, 设计了针对不同最佳功率点的整流电路 …
Characterization and modeling of 650V GaN diodes for high frequency power conversion
The constant growth of electric consumption leads to considerable progress in power
conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological …
conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological …
Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements
H Bouillaud, Y Roelens, É Okada… - 2024 19th European …, 2024 - ieeexplore.ieee.org
While Schottky diode for THz generation have been extensively studied over last decades,
technological developments are still required to reach the physical limits of these devices …
technological developments are still required to reach the physical limits of these devices …