Study on an S-band rectenna array for wireless microwave power transmission

W Huang, B Zhang, X Chen, KM Huang… - Progress In …, 2013 - jpier.org
The microwave power transmission is an approach for wireless power transmission. As an
important component of a microwave wireless power transmission systems, microwave …

[HTML][HTML] Accurately modeling of zero biased Schottky-diodes at millimeter-wave frequencies

J Gutiérrez, K Zeljami, T Fernández, JP Pascual… - Electronics, 2019 - mdpi.com
This paper presents and discusses the careful modeling of a Zero Biased Diode, including
low-frequency noise sources, providing a global model compatible with both wire bonding …

Experimental studies of the frequency dependence of the low-barrier mott diode impedance

NV Vostokov, VI Shashkin - IEEE Transactions on Electron …, 2016 - ieeexplore.ieee.org
We study the microwaave impedance of low-barrier Mott diodes with a δ-doped layer near
the metal contact. Parameters of the elements of the diode equivalent circuit are determined …

Comparison of microstrip W-band detectors based on zero bias Schottky-diodes

J Gutiérrez, K Zeljami, JP Pascual, T Fernández… - Electronics, 2019 - mdpi.com
This paper presents and discusses three different low-cost microstrip implementations of
Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from …

[KNIHA][B] Modelling and characterisation of terahertz planar Schottky diodes

AY Tang - 2013 - search.proquest.com
This thesis deals with the modelling and characterisation of THz planar Schottky diodes,
focusing on analyses of geometry-dependent electrical parasitics and the thermal …

A decade bandwidth mixers based on planar transformers and quasi-vertical Schottky diodes implemented in GaAs MMIC technology

N Drobotun, D Danilov… - 2020 50th European …, 2021 - ieeexplore.ieee.org
This paper presents a decade bandwidth passive double balanced mixers implemented in
GaAs MMIC technology. The mixers employ ultra-broadband coupled balun transformers …

Large-signal Metal-Insulator-Graphene diode model on a flexible substrate for microwave application

CY Fan, MD Wei, M Saeed, A Hamed… - 2018 IEEE MTT-S …, 2018 - ieeexplore.ieee.org
In this paper, a metal-insulator-graphene (MIG) diode is designed, fabricated, and modelled.
The MIG diode is realized on a 50 μm-Kapton substrate based on graphene material grown …

[HTML][HTML] 一种基于子阵分解的高效整流天线阵列

张鹤馨, 刘长军 - 2016 - html.rhhz.net
针对微波无线能量传输系统中接收端功率密度非均匀分布, 提出了一种高效的子阵分解微波整流
天线. 通过研究接收天线阵列功率密度分布规律, 设计了针对不同最佳功率点的整流电路 …

Characterization and modeling of 650V GaN diodes for high frequency power conversion

D Martin, D Nicolas, P Loris, O Etienne… - 2021 IEEE Design …, 2021 - ieeexplore.ieee.org
The constant growth of electric consumption leads to considerable progress in power
conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological …

Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements

H Bouillaud, Y Roelens, É Okada… - 2024 19th European …, 2024 - ieeexplore.ieee.org
While Schottky diode for THz generation have been extensively studied over last decades,
technological developments are still required to reach the physical limits of these devices …