Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
S Sheppard, RP Smith - US Patent 7,238,560, 2007 - Google Patents
US7238560B2 - Methods of fabricating nitride-based transistors with a cap layer and a
recessed gate - Google Patents US7238560B2 - Methods of fabricating nitride-based …
recessed gate - Google Patents US7238560B2 - Methods of fabricating nitride-based …
Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
S Sheppard, RP Smith - US Patent 7,678,628, 2010 - Google Patents
US7678628B2 - Methods of fabricating nitride-based transistors with a cap layer and a
recessed gate - Google Patents US7678628B2 - Methods of fabricating nitride-based …
recessed gate - Google Patents US7678628B2 - Methods of fabricating nitride-based …
Low damage, Cl2-based gate recess etching for 0.3-μm gate-length AlGaN/GaN HEMT fabrication
WK Wang, YJ Li, CK Lin, YJ Chan… - IEEE Electron Device …, 2004 - ieeexplore.ieee.org
The traditional dry etching for GaN using the Ar/Cl 2 mixture gas in the reactive ion etching
system has been developed. In order to reduce the surface damage, the additional CH 4 gas …
system has been developed. In order to reduce the surface damage, the additional CH 4 gas …
High-frequency noise in AlGaN/GaN HFETs
S Nuttinck, E Gebara, J Laskar… - IEEE microwave and …, 2003 - ieeexplore.ieee.org
We present in this letter the benefits of GaN-based electronic devices for low-noise MMICs.
A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is …
A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is …
Nitride-based transistors with a cap layer and a recessed gate
S Sheppard, RP Smith - US Patent 9,666,707, 2017 - Google Patents
An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact,
may reduce gate leakage and/or provide a high quality gate contact in a semiconduc tor …
may reduce gate leakage and/or provide a high quality gate contact in a semiconduc tor …
Applications of GaN microwave electronic devices
S Nuttinck, E Gebara, B Banerjee… - IEICE transactions on …, 2003 - search.ieice.org
We report in this paper, the performance of AlGaN/GaN HFETs in the context of high power,
low noise and high temperature operations, along with a comparison of their characteristics …
low noise and high temperature operations, along with a comparison of their characteristics …
Recess gate AlGaN/GaN HEMTs using overlap gate metal structure
T Ide, G Piao, Y Yano, M Shimizu - physica status solidi c, 2010 - Wiley Online Library
Abstract Recess gate AlGaN/GaN HEMTs with the overlap gate metal structure were
fabricated. The overlap gate metal structure effectively reduced the short channel effect and …
fabricated. The overlap gate metal structure effectively reduced the short channel effect and …
Cathodoluminescence spectroscopy studies of aluminum gallium nitride and silicon device structures as a function of irradiation and processing
BD White - 2006 - rave.ohiolink.edu
Spatially-resolved cathodoluminescence spectroscopy (CLS) has been used to identify the
presence of radiative point and extended defects in the semiconductor band gap produced …
presence of radiative point and extended defects in the semiconductor band gap produced …
Advanced Dielectrics For Gallium Nitride Power Electronics
R Brown - 2011 - ecommons.cornell.edu
This dissertation details the synthesis, characterization, and application of low-pressure
chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz) dielectrics to …
chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz) dielectrics to …