At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

The high power operation of mid-infrared quantum cascade lasers at temperatures up to T
320 K is reported. Gain at high temperature is optimized by a design combining low do** …

Semiconductor lasers emitting in mid-infrared (IR) range, 2–5μm, have many important
applications in semiconductor industries, military, environmental protection …

A substantial effort has been devoted in recent years to the development of large focal plane
arrays (FPA) of photovoltaic detectors sensitive to infrared (IR) radiation in the 8–12 μm …

Lasers continue to be an amazingly robust field of activity. Anyone seeking a photon source
is now confronted with an enormous number of possible lasers and laser wavelengths to …

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-,
3.4-, 4.1-, and 4.3-/spl mu/m diodes. The devices utilize multiple-quantum-well (MQW) active …

InAs/GaSb short-period superlattices (SLs) with a broken gap type-II band alignment are
investigated for the fabrication of photovoltaic pin-photodetectors on GaSb substrates. The …

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-
infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas …

In this work, we present experimental studies on the cross-plane thermal conductivity of
InAs/AlSb superlattices. The thermal conductivities of MBE-grown InAs/AlSb superlattices …

We present an optimized design and detailed numerical simulations for a mid-IR type-II
interband InGaSb QW cascade laser (T2ICL) with InAs-In/sub 0.3/Ga/sub 0.7/Sb active …