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STT-MRAM sensing: a review
This brief presents a review of developments in spin-transfer-torque magnetoresistive
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
random access memory (STT-MRAM) sensing over the past 20 years from a circuit design …
An N40 256K× 44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance
CC Chou, ZJ Lin, PL Tseng, CF Li… - … Solid-State Circuits …, 2018 - ieeexplore.ieee.org
RRAM is an attractive and low-cost memory structure for embedded applications due to the
simplicity of the RRAM element (RE) and its compatibility with a logic process. A RRAM bit …
simplicity of the RRAM element (RE) and its compatibility with a logic process. A RRAM bit …
An MRAM-based deep in-memory architecture for deep neural networks
This paper presents an MRAM-based deep in-memory architecture (MRAM-DIMA) to
efficiently implement multi-bit matrix vector multiplication for deep neural networks using a …
efficiently implement multi-bit matrix vector multiplication for deep neural networks using a …
Field-free 3T2SOT MRAM for non-volatile cache memories
Continued scaling of Complementary Metal Oxide Semiconductor (CMOS) integrated circuit
technology is slowing down due to physical limitations, while the static power of CMOS …
technology is slowing down due to physical limitations, while the static power of CMOS …
Temperature impact analysis and access reliability enhancement for 1T1MTJ STT-RAM
Spin-transfer torque magnetic random access memory (STT-RAM) is a promising and
emerging technology due to its many advantageous features such as scalability …
emerging technology due to its many advantageous features such as scalability …
Offset-canceling current-sampling sense amplifier for resistive nonvolatile memory in 65 nm CMOS
Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-
generation memory. However, maintaining a target sensing margin is a challenge with …
generation memory. However, maintaining a target sensing margin is a challenge with …
A self-timed voltage-mode sensing scheme with successive sensing and checking for STT-MRAM
Y Zhou, H Cai, L ** for mram-based digital in-memory computing
T Na - IEEE Transactions on Circuits and Systems II: Express …, 2023 - ieeexplore.ieee.org
This brief presents a novel ternary output binary neural network (BNN) and an MRAM-based
digital in-memory computing (IMC) architecture. The proposed ternary output BNN and IMC …
digital in-memory computing (IMC) architecture. The proposed ternary output BNN and IMC …
Polymorphic hybrid CMOS-MTJ logic gates for hardware security applications
Various hardware security concerns, such as hardware Trojans and IP piracy, have sparked
studies in the security field employing alternatives to CMOS chips. Spintronic devices are …
studies in the security field employing alternatives to CMOS chips. Spintronic devices are …