Review and analysis of SiC MOSFETs' ruggedness and reliability
J Wang, X Jiang - IET Power Electronics, 2020 - Wiley Online Library
SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
Gate and base drivers for silicon carbide power transistors: An overview
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
Review on SiC MOSFETs high-voltage device reliability focusing on threshold voltage instability
An overview over issues and findings in SiC power MOSFET reliability is given. The focus of
this article is on threshold instabilities and the differences to Si power MOSFETs …
this article is on threshold instabilities and the differences to Si power MOSFETs …
Temperature-dependent short-circuit capability of silicon carbide power MOSFETs
This paper presents a comprehensive short-circuit ruggedness evaluation and numerical
investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit …
investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit …
Short-circuit protection circuits for silicon-carbide power transistors
An experimental analysis of the behavior under short-circuit conditions of three different
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
silicon-carbide (SiC) 1200-V power devices is presented. It is found that all devices take up …
SiC power MOSFETs performance, robustness and technology maturity
Abstract Relatively recently, SiC power MOSFETs have transitioned from being a research
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
exercise to becoming an industrial reality. The potential benefits that can be drawn from this …
Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions
A Tsibizov, I Kovačević-Badstübner… - … on Power Electronics, 2019 - ieeexplore.ieee.org
Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to
estimate the device temperature in operation, typically assuming a constant thermal …
estimate the device temperature in operation, typically assuming a constant thermal …
Short-circuit evaluation and overcurrent protection for SiC power MOSFETs
In this paper, the short-circuit (SC) performance of two different SiC MOSFETs is
experimentally investigated for different input voltages, biasing voltages and case …
experimentally investigated for different input voltages, biasing voltages and case …
Experimental and theoretical demonstration of temperature limitation for 4H-SiC MOSFET during unclamped inductive switching
J An, S Hu - IEEE Journal of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
This article focuses on the avalanche energy handing ability and theoretical demonstration
of the avalanche failure mechanism for the SiC MOSFET by the unclamped inductive …
of the avalanche failure mechanism for the SiC MOSFET by the unclamped inductive …
Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests
X Zhou, H Su, Y Wang, R Yue, G Dai… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further
verified before they could replace silicon counterparts in power applications. In this paper …
verified before they could replace silicon counterparts in power applications. In this paper …