Modulation spectroscopy is a powerful method for the study and characterization of a large
number of semiconductor configurations, including bulk/thin film, microstructures …

In the presence of an electric field, the dielectric constant of a semiconductor exhibits Franz–
Keldysh oscillations (FKO), which can be detected by modulated reflectance. Although it …

This article gives a survey of the application of Raman spectroscopy to analyze the
electronic band bending at surfaces and interfaces of III–V semiconductors. Theoretical …

We present a detailed generalization of the Franz-Keldysh theory of electromodulation
which takes into account the presence of a dc surface electric field, scrE dc s. We …

Photoreflectance‐derived band‐gap parameters as a function of temperature for InGaAs and
InAlAs lattice matched to InP are reported. The experiment was performed on a set of …

Franz–Keldysh oscillations from GaAs and AlGaAs structures have been studied and we find
that the electric field obtained from the oscillations is in agreement with that derived from …

Photoreflectance (PR) spectroscopy has been used to study the built-in surface potential in
GaAs epitaxial film grown by molecular beam epitaxy (MBE). The PR signal amplitude …

We briefly review the ideas that have shaped modern optics and have led to various
applications of light ranging from spectroscopy to astrophysics, and street lights to quantum …

We report a photoreflectance study of surface photovoltage (V,) effects on the determination
of Fermi level pinning (YF) on (100) n-GaAs in air and with W-metal coverage (in situ) as a …

We determine types and concentrations of free carriers in GaAs layers under organometallic
chemical vapor deposition growth conditions from the linear electro‐optic structure observed …