Scaling of silicon field-effect transistors has fueled the exponential development of
microelectronics in the past 60 years, but is now close to its physical limits with the critical …

A deep understanding of the interface states in metal–oxide–semiconductor (MOS)
structures is the premise of improving the gate stack quality, which sets the foundation for …

Atomically precise graphene nanoribbons (GNRs) synthesized from the bottom-up exhibit
promising electronic properties for high-performance field-effect transistors (FETs). The …

Low-dimensional semiconductors such as one-dimensional carbon nanotubes could be
used to shrink the gate length of metal–oxide–semiconductor field-effect transistors …

Carbon nanotube (CNT) transistors demonstrate high mobility but also experience off-state
leakage due to the small effective mass and band gap. The lower limit of off-current (I MIN) …

Being an excellent representative of atomically thin 2-D materials, graphene has attracted
extensive research attention in the fields of electronic and optoelectronic devices. However …

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and
unprecedented quantum-related and mesoscopic transport phenomena. However, it can be …

This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

A new generation of compact and high-speed electronic devices, based on carbon, would
be enabled through the development of robust gate oxides with sub-nanometer effective …

The active-matrix technology incorporates a transistor to exert precise control over each
pixel within a pixel array, eliminating the issue of crosstalk between neighboring pixels that …