We report, in this paper, that crystalline In–Ga–Zn-oxide (IGZO) can be formed over an
amorphous surface or over an uneven surface by a sputtering process at lower than 500 C …

The influence of dangling-bond defects and the position of the Fermi level on the charge
carrier transport properties in undoped and phosphorous doped thin-film silicon with …

Recent studies have shown that IGZO are variously influenced by photoirradiation. In this
study, by using measurement results of optical properties and calculation results, a …

The applicability of photothermal deflection spectroscopy (PDS) and the constant
photocurrent method (CPM) to chemical vapor deposited and physical vapor deposited …

Abstract Nanocrystalline Cadmium Sulfide (nc-CdS) thin films have been prepared on well-
cleaned glass substrate at room temperature (300 K) by thermal evaporation technique …

Optical absorption edges in five chalcogenide glasses, Se, As 2 S (Se) 3, and GeS (Se) 2,
and a-Si: H have been measured using the constant-photocurrent method at 10–400 K. In …

The light-induced degradation of an intrinsic hydrogenated amorphous silicon sample has
been studied from the evolution of the sub-band-gap absorption coefficient. The …

Recent studies have shown that an indium gallium zinc oxide (In-Ga-Zn-O: IGZO) thin film is
affected by light irradiation in a variety of ways. Such photoresponse properties are …

In this chapter we present optoelectronic characterization techniques that can be applied to
coplanar samples as well as solar devices. Using the photoconductive properties of the …

The steady-state surface photovoltage technique (SPV) is widely used to evaluate minority
photocarriers diffusion length for the characterization of photovoltaic device performance …