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A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
Design of ternary logic circuits using GNRFET and RRAM
In this paper, the designs of ternary digital circuits are discussed. The ternary logic is a better
choice over conventional logics due its extraordinary offers such as high operating speed …
choice over conventional logics due its extraordinary offers such as high operating speed …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
An ultra‐low power and energy‐efficient ternary Half‐Adder based on unary operators and two ternary 3: 1 multiplexers in 32‐nm GNRFET technology
E Abbasian, M Orouji… - … Journal of Circuit …, 2023 - Wiley Online Library
Summary Internet‐of‐Things (IoTs)‐based embedded systems require energy‐efficient
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
designs for long‐term operation. To achieve energy‐efficient designs, multiple‐valued logic …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
Design of a highly stable and robust 10T SRAM cell for low-power portable applications
This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …
appropriate for low-power portable applications. The cell core of the proposed design is a …
A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology
Complementary metal-oxide-semiconductor (CMOS) device faces various unknown short
channel effects (SCEs) such as subthreshold leakage and drain-induced barrier lowering …
channel effects (SCEs) such as subthreshold leakage and drain-induced barrier lowering …
An energy-efficient design of ternary SRAM using GNRFETs
The primary requirement of internet-of-things (IoT) applications is to have an energy-efficient
design that extends the battery life for long-term operation. To achieve energy efficiency, one …
design that extends the battery life for long-term operation. To achieve energy efficiency, one …
A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
In this paper, a robust sub-threshold 13 T-SRAM cell is designed, which in addition to
reducing power and energy consumption can show high reliability and have the least error …
reducing power and energy consumption can show high reliability and have the least error …