Site-controlled and advanced epitaxial Ge/Si quantum dots: Fabrication, properties, and applications
In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …
Enhanced telecom emission from single group-IV quantum dots by precise CMOS-compatible positioning in photonic crystal cavities
Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …
Recipes for the fabrication of strictly ordered Ge islands on pit-patterned Si (001) substrates
We identify the most important parameters for the growth of ordered SiGe islands on pit-
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
patterned Si (001) substrates. From a multi-dimensional parameter space we link individual …
One-stage formation of two-dimensional photonic crystal and spatially ordered arrays of self-assembled ge (Si) nanoislandson pit-patterned silicon-on-insulator …
A new approach to improve the light-emitting efficiency of Ge (Si) quantum dots (QDs) by the
formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is …
formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is …
Single germanium quantum dot embedded in photonic crystal nanocavity for light emitter on silicon chip
A silicon light emitter in telecom-band based on a single germanium quantum dot precisely
embedded in a silicon photonic crystal nanocavity is fabricated by a scalable method. A …
embedded in a silicon photonic crystal nanocavity is fabricated by a scalable method. A …
In-situ annealing and hydrogen irradiation of defect-enhanced germanium quantum dot light sources on silicon
While light-emitting nanostructures composed of group-IV materials fulfil the mandatory
compatibility with CMOS-fabrication methods, factors such as the structural stability of the …
compatibility with CMOS-fabrication methods, factors such as the structural stability of the …
How pit facet inclination drives heteroepitaxial island positioning on patterned substrates
We demonstrate the possibility of growing SiGe islands on patterned Si (001) substrates with
pits having a continuous variation of the sidewall inclination angle α from α∼ 4° to α∼ 54° …
pits having a continuous variation of the sidewall inclination angle α from α∼ 4° to α∼ 54° …
Commensurate germanium light emitters in silicon-on-insulator photonic crystal slabs
We report on the fabrication and characterization of silicon-on-insulator (SOI) photonic
crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters …
crystal slabs (PCS) with commensurately embedded germanium quantum dot (QD) emitters …
The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer
For the prototypical SiGe/Si (001) Stranski-Krastanow (SK) growth system, the influence of
intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 C …
intermixing caused by the deposition of a Si cap layer at temperatures T cap between 300 C …
Photoluminescence enhancement through vertical stacking of defect-engineered Ge on Si quantum dots
In this work, we show that the room-temperature photoluminescence intensity from Ge ion-
bombarded (GIB) epitaxial Ge on Si quantum dots (QD) can be improved by their vertical …
bombarded (GIB) epitaxial Ge on Si quantum dots (QD) can be improved by their vertical …