Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin‐Orbit Torque by a MoS2 Layer

Q **e, W Lin, B Yang, X Shu, S Chen, L Liu… - Advanced …, 2019 - Wiley Online Library
Abstract 2D transition metal dichalcogenides have attracted much attention in the field of
spintronics due to their rich spin‐dependent properties. The promise of highly compact and …

Probing the low-temperature limit of the quantum anomalous Hall effect

L Pan, X Liu, QL He, A Stern, G Yin, X Che, Q Shao… - Science …, 2020 - science.org
Quantum anomalous Hall effect has been observed in magnetically doped topological
insulators. However, full quantization, up until now, is limited within the sub–1 K temperature …

Termination switching of antiferromagnetic proximity effect in topological insulator

CY Yang, L Pan, AJ Grutter, H Wang, X Che, QL He… - Science …, 2020 - science.org
This work reports the ferromagnetism of topological insulator,(Bi, Sb) 2Te3 (BST), with a
Curie temperature of approximately 120 K induced by magnetic proximity effect (MPE) of an …

Temperature Dependence Strategy for Achieving Enhanced Reflow-Capable MRAM with a Multi-Interface Structure

Y Sun, F Meng, Y Wang - ACS Applied Electronic Materials, 2024 - ACS Publications
In terms of practical applications, a performance bottleneck with spin-transfer-torque
magnetic random-access memory (STT-MRAM) devices is evident at varying temperatures …

[HTML][HTML] Plasma–surface interactions at the atomic scale for patterning metals

ND Altieri, JKC Chen, L Minardi… - Journal of Vacuum Science …, 2017 - pubs.aip.org
Building upon the depth and breadth of Harold Winters's work, this paper pays tribute to his
pioneering contribution in the field of plasma etching of metals, and how that knowledge …

Geometrically pinned magnetic domain wall for multi-bit per cell storage memory

MA Bahri, R Sbiaa - Scientific reports, 2016 - nature.com
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls
(DWs) by an external magnetic field or a spin-polarized current. Controlling the position of …

[HTML][HTML] Enhancement of skyrmion density via interface engineering

S Bhatti, HK Tan, MI Sim, VL Zhang, M Sall, ZX **ng… - APL Materials, 2023 - pubs.aip.org
Magnetic skyrmions are promising candidates for computing and memory applications. The
static and dynamic behaviors of skyrmions are tunable by altering the interfacial magnetic …

Giant Electrical Modulation of Terahertz Emission in Pb (Mg 1/3 Nb 2/3) 0.7 Ti 0.3 O 3/Co-Fe-B/Pt Structure

H Cheng, Q Huang, H He, Z Zhao, H Sun, Q Wu… - Physical Review …, 2021 - APS
Spintronic terahertz (THz) emitters based on ferromagnetic (FM)-nonmagnetic (NM)
heterostructures are the focus of many experimental endeavors for THz sources. However …

The study of origin of interfacial perpendicular magnetic anisotropy in ultra-thin CoFeB layer on the top of MgO based magnetic tunnel junction

ZP Li, S Li, Y Zheng, J Fang, L Chen, L Hong… - Applied Physics …, 2016 - pubs.aip.org
A comprehensive microstructure study has been conducted experimentally for identifying the
origin or mechanism of perpendicular magnetic anisotropy (PMA) in the ultra-thin (10 Å) …

Bimodal alteration of cognitive accuracy for spintronic artificial neural networks

A Kumar, D Das, DJX Lin, L Huang, SLK Yap… - Nanoscale …, 2024 - pubs.rsc.org
Spintronics-based artificial neural networks (ANNs) exhibiting nonvolatile, fast, and energy-
efficient computing capabilities are promising neuromorphic hardware for performing …