Recent theoretical and experimental studies of the interlayer Dzyaloshinskii–Moriya
interaction (DMI) have sparked great interest in its implementation into practical magnetic …

Antiferromagnets are competitive candidates for the next generation of spintronic devices
owing to their superiority in small‐scale and low‐power‐consumption devices. The electrical …

Achieving field-free current-induced switching of perpendicular magnetization is crucial for
the advancement of spin–orbit torque magnetic random access memory technology. In our …

Realizing spin–orbit torque (SOT)-driven magnetization switching offers promising
opportunities for the advancement of next-generation spintronics. However, the relatively …

Spintronics, leveraging electron spin for information processing, promises substantial
advancements in energy-efficient computing. Van der Waals (vdW) magnetic materials, with …