Nanotechnology creates a new challenge for materials characterization because device
properties now depend on size and shape as much as they depend on the traditional …

The α phase of tin is a zero-gap semiconductor with an inverted band structure with respect
to other group-IV elements like Ge. The Γ 6 c states lie energetically below the Γ 8 v levels …

SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-
film transistors (TFTs). In this work, ambipolar behavior was observed in SnO x TFTs …

Simultaneous twin polymerization was used to synthesize hybrid materials composed of tin
oxide, silica, and a phenolic resin starting from a mixture of 2, 2′‐spirobi [4H‐1, 3, 2 …

A method to form epitaxial Ge 1− x Sn x quantum dots (QDs) on Si (111) substrates has
been developed by codeposition of Ge and Sn on ultrathin SiO 2 films with predeposited Ge …

We present calculations of impact ionization rates, carrier multiplication yields, and solar-
power conversion efficiencies in solar cells based on quantum dots (QDs) of a semimetal, α …

Self-assembled quantum dots in a Si–Ge–Sn system attract research attention as possible
direct band gap materials, compatible with Si-based technology, with potential applications …

The diamond structure of tin (α-Sn) can be stabilized in nanocrystals embedded in a suitable
host. We developed highly accurate parameterizations for tight-binding simulation of such …

We investigate the optical properties of hydrogenated α-Sn nanocrystals up to diameters of
3.6 nm in the framework of an ab initio pseudopotential method including spin–orbit …

Sn-based nanocrystals were prepared by depositing Sn-rich Si O 2 films using a
cosputtering process and a subsequent vacuum annealing. Transmission electron …