In the present work, we have demonstrated the impact of barrier inhomogeneities on the
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …

Gallium nitride (GaN)-based devices have significant potential for space applications.
However, the mechanisms of radiation damage to the device, particularly from strong …

In the complex space radiation environment, space electronic devices are inevitably
damaged by energetic particles, such as protons, leading to degradation of electrical …

The electrical characteristics and microstructures of β-Ga 2 O 3 Schottky barrier diode (SBD)
devices irradiated with swift heavy ions (2096 MeV Ta ions) have been studied. It was found …

The radiation effect of swift heavy ions (16 MeV 181 Ta) on the Au/Ni/β-Ga 2 O 3 vertical
Schottky barrier diodes (SBDs) were investigated at the fluence of 1× 10 8, 3× 10 8 and 3× …

A Seebeck coefficient measurement apparatus has been designed and developed, which is
very effective for accurate characterization of different types of samples in a wide …

In-situ measurements such as deep level transient spectroscopy (DLTS) provide reliable
information for the identification of defects in electronic devices. For GaN-based devices …

In this article, the impact of 20 MeV proton irradiation on NiO x/β-Ga 2 O 3 p–n diodes has
been investigated. After 20 MeV proton irradiation with a fluence of 2× 10 12 p/cm 2, the …

The impact of heavy ion irradiation on the β-Ga 2 O 3 pn diode and its physical mechanism
have been studied in this Letter. After the irradiation fluence of 1× 10 8 cm− 2, it is observed …

High-resolution X-ray diffraction, temperature-dependent photoluminescence (PL), time-
resolved PL, and positron annihilation spectroscopy are employed to investigate the …