Using a complex of secondary and photoelectron spectroscopy methods, the effects of the
implantation of In+ ions with an energy of E0= 1 keV at different doses and subsequent …

Abstract Granular GaAs:(Mn, Ga) As films were prepared by annealing the Ga0. 985Mn0.
015As/GaAs layers at 500° C or 600° C. It is commonly accepted that this processing should …

The first attempts to establish an implantation process leading to formation of ferromagnetic
inclusions inside the GaSb matrix are presented. Gallium antimonide containing …

In the present work, gallium arsenide samples implanted with 325 keV Mn+ ions for the
fluence of 5× 1015, 1× 1016 and 2× 1016 ions cm− 2, have been investigated using Raman …

In the present work, semi-insulating GaAs samples implanted with 50 keV silicon negative
ions with fluences varying from 1 x 10 14 to 1 x 10 16 ions cm-2 have been investigated …

Surface modification of GaAs (100) due to Ar+ ion bombardment has been studied by
measuring optical, AFM, SEM, Raman and PL measurements. GaAs was bombarded with …

In this study, we use a semi-insulating GaAs wafer to prepare a GaMnAs thin film by Mn ion
implantation and subsequent helium ion beam induced epitaxial crystallization. In addition …

In the present work, 325 keV Mn+ ions were implanted into GaAs with various fluences
varying from 1 x1015 to 1x1016 ions cm-2. The magnetic properties of Mn+ implanted GaAs …

In this study, un-doped GaAs were uniformly implanted with 325 keV Mn+ ions for the
various fluences varying from 1x 1015 to 2 x 1016 ions cm-2 using 1.7 MV Tandetron …

Mn thin film deposited GaAs samples were implanted with 250 keV Ar+ 2 ions for various
fluences 5× 10 15, 1× 10 16 and 5× 10 16 ions cm− 2. Optical and structural properties of the …