MicroLED technologies and applications: characteristics, fabrication, progress, and challenges
Z Chen, S Yan, C Danesh - Journal of Physics D: Applied Physics, 2021 - iopscience.iop.org
Micro light-emitting diode (microLED) technology is expected to be used in next-generation
displays and other applications due to its many advantages. This paper categorizes …
displays and other applications due to its many advantages. This paper categorizes …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Complete composition tunability of InGaN nanowires using a combinatorial approach
The III nitrides have been intensely studied in recent years because of their huge potential
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …
for everything from high-efficiency solid-state lighting and photovoltaics to high-power and …
Structure and electronic properties of InN and In-rich group III-nitride alloys
The experimental study of InN and In-rich InGaN by a number of structural, optical and
electrical methods is reviewed. Recent advances in thin film growth have produced single …
electrical methods is reviewed. Recent advances in thin film growth have produced single …
Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
YS Lin, KJ Ma, C Hsu, SW Feng, YC Cheng… - Applied Physics …, 2000 - pubs.aip.org
The information on the variations of indium composition, aggregation size, and quantum-
well width is crucially important for understanding the optical properties and, hence …
well width is crucially important for understanding the optical properties and, hence …
Surface energetics, pit formation, and chemical ordering in InGaN alloys
JE Northrup, LT Romano, J Neugebauer - Applied physics letters, 1999 - pubs.aip.org
We present first-principle calculations of the structure and energetics of the GaN (1011)
surface, and present models for the reconstructions. A strong preference for In surface …
surface, and present models for the reconstructions. A strong preference for In surface …
Microstructures produced during the epitaxial growth of InGaN alloys
GB Stringfellow - Journal of Crystal Growth, 2010 - Elsevier
Effects due to phase separation in InGaN have been identified as having major effects on
the performance of devices, in particular light-emitting diodes (LEDs) and injection lasers …
the performance of devices, in particular light-emitting diodes (LEDs) and injection lasers …
First-principles calculations of the thermodynamic and structural properties of strained and alloys
We present first-principles calculations of the thermodynamic and structural properties of
cubic In x Ga 1− x N and Al x Ga 1− x N alloys. They are based on the generalized …
cubic In x Ga 1− x N and Al x Ga 1− x N alloys. They are based on the generalized …
Improved refractive index formulas for the and alloys
GM Laws, EC Larkins, I Harrison, C Molloy… - Journal of applied …, 2001 - pubs.aip.org
A detailed understanding of the nitride refractive indices is essential for the modeling and
design of III–N laser structures. In this article, we report on the assessment of the refractive …
design of III–N laser structures. In this article, we report on the assessment of the refractive …
Indium-induced changes in GaN (0001) surface morphology
JE Northrup, J Neugebauer - Physical Review B, 1999 - APS
First-principles calculations of the energetics of the In-terminated GaN (0001),(0001 ̱),(101
̱ 1), and (10 11) surfaces indicate that In has a substantial effect on the relative energies of …
̱ 1), and (10 11) surfaces indicate that In has a substantial effect on the relative energies of …