Machine learning approach for predicting the effect of statistical variability in Si junctionless nanowire transistors
H Carrillo-Nuñez, N Dimitrova… - IEEE Electron …, 2019 - ieeexplore.ieee.org
This letter investigates the possibility to replace numerical TCAD device simulations with a
multi-layer neural network (NN). We explore if it is possible to train the NN with the required …
multi-layer neural network (NN). We explore if it is possible to train the NN with the required …
A tutorial on the NEGF method for electron transport in devices and defective materials
A tutorial on non-equilibrium Green's function theory and its applications on nanoscale
devices is presented. A stepwise tutorial presentation, starting from the concept of Green's …
devices is presented. A stepwise tutorial presentation, starting from the concept of Green's …
CMOS compatibility of semiconductor spin qubits
Several domains of society will be disrupted once millions of high-quality qubits can be
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
brought together to perform fault-tolerant quantum computing (FTQC). All quantum …
Analysis of threshold voltage variability due to random dopant fluctuations in junctionless FETs
A Gnudi, S Reggiani, E Gnani… - IEEE Electron Device …, 2012 - ieeexplore.ieee.org
An analytical formulation of the threshold voltage variance induced by random dopant
fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar …
fluctuations in junctionless transistors is derived for both cylindrical nanowire and planar …
[BOOK][B] Intelligent nanomaterials
Overall, this book presents a detailed and comprehensive overview of the state-of-the-art
development of different nanoscale intelligent materials for advanced applications. Apart …
development of different nanoscale intelligent materials for advanced applications. Apart …
Bounds to electron spin qubit variability for scalable CMOS architectures
Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and
scalable fabrication. In the age of quantum technology, however, the metrics that crowned …
scalable fabrication. In the age of quantum technology, however, the metrics that crowned …
Variability of electron and hole spin qubits due to interface roughness and charge traps
Semiconductor spin qubits may show significant device-to-device variability in the presence
of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout, or process …
of spin-orbit coupling mechanisms. Interface roughness, charge traps, layout, or process …
Quantum calculations of the carrier mobility: Methodology, Matthiessen's rule, and comparison with semi-classical approaches
We discuss carrier mobilities in the quantum Non-Equilibrium Green's Functions (NEGF)
framework. We introduce a method for the extraction of the mobility that is free from contact …
framework. We introduce a method for the extraction of the mobility that is free from contact …
Investigation on variability in metal-gate Si nanowire MOSFETs: Analysis of variation sources and experimental characterization
The characteristic variability in gate-all-around (GAA) Si nanowire (NW) metal-oxide-
semiconductor field-effect transistors (SNWTs) is analyzed and experimentally investigated …
semiconductor field-effect transistors (SNWTs) is analyzed and experimentally investigated …
A multi-method simulation toolbox to study performance and variability of nanowire FETs
An in-house-built three-dimensional multi-method semi-classical/classical toolbox has been
developed to characterise the performance, scalability, and variability of state-of-the-art …
developed to characterise the performance, scalability, and variability of state-of-the-art …