The selection and design of electrode materials for field emission devices

S Zhao, H Ding, X Li, H Cao, Y Zhu - Materials Science in Semiconductor …, 2023 - Elsevier
Semiconductor field effect devices (FEDs) have become ubiquitous in everyday life due to
their widespread applications. However, their stability in challenging environments such as …

Rationally Designing High‐Performance Versatile Organic Memristors through Molecule‐Mediated Ion Movements

T Zhang, L Wang, W Ding, Y Zhu, H Qian… - Advanced …, 2023 - Wiley Online Library
Organic memory has attracted tremendous attention for next‐generation electronic elements
for the molecules' striking ease of structural design. However, due to them being hardly …

Photoredox phase engineering of transition metal dichalcogenides

J Lim, JI Lee, Y Wang, N Gauriot, E Sebastian… - Nature, 2024 - nature.com
Crystallographic phase engineering plays an important part in the precise control of the
physical and electronic properties of materials. In two-dimensional transition metal …

Electron emission devices for energy‐efficient systems

S Nirantar, T Ahmed, M Bhaskaran… - Advanced Intelligent …, 2019 - Wiley Online Library
Artificial intelligence platforms, high‐speed computation, and data handling systems
increasingly need energy‐efficient systems. Electron emission was fundamental to the …

Multi-bit graphene-based bias-encoded metasurfaces for real-time terahertz wavefront sha**: From controllable orbital angular momentum generation toward …

K Rouhi, H Rajabalipanah, A Abdolali - Carbon, 2019 - Elsevier
In this paper, for the first time, a new generation of multi-bit graphene-based bias-encoded
metasurfaces (MGBMs) is proposed for real-time reflected wavefront manipulation at …

Insights into Multilevel Resistive Switching in Monolayer MoS2

S Bhattacharjee, E Caruso, N McEvoy… - … applied materials & …, 2020 - ACS Publications
The advent of two-dimensional materials has opened a plethora of opportunities in
accessing ultrascaled device dimensions for future logic and memory applications. In this …

High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and …

CH Choi, T Kim, S Ueda, YS Shiah… - … Applied Materials & …, 2021 - ACS Publications
In this work, high-performance amorphous In0. 75Ga0. 23Sn0. 02O (a-IGTO) transistors with
an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing …

Flash Joule heating induced highly defective graphene towards ultrahigh lithium ion storage

S Dong, Y Song, M Su, G Wang, Y Gao, K Zhu… - Chemical Engineering …, 2024 - Elsevier
Introducing defects is an effective approach to promote the lithium ion storage ability of host
material. Constructing pure defects is beneficial to understand the lithium ion storage …

Nanoscale all-oxide-heterostructured bio-inspired optoresponsive nociceptor

M Karbalaei Akbari, J Hu, F Verpoort, H Lu… - Nano-Micro Letters, 2020 - Springer
Retina nociceptor, as a key sensory receptor, not only enables the transport of warning
signals to the human central nervous system upon its exposure to noxious stimuli, but also …

Highly conductive and transparent reduced graphene oxide nanoscale films via thermal conversion of polymer-encapsulated graphene oxide sheets

M Savchak, N Borodinov, R Burtovyy… - … applied materials & …, 2018 - ACS Publications
Despite noteworthy progress in the fabrication of large-area graphene sheetlike
nanomaterials, the vapor-based processing still requires sophisticated equipment and a …