GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …

High-efficiency InGaN-based yellow light-emitting diodes (LEDs) with high brightness are
desirable for future high-resolution displays and lighting products. Here, we demonstrate …

Optimization of internal quantum efficiency (IQE) for InGaN quantum wells (QWs) light-
emitting diodes (LEDs) is investigated. Staggered InGaN QWs with large electron-hole …

High-efficiency GaN-based green LEDs are of paramount importance to the development of
the monolithic integration of multicolor emitters and full-color high-resolution displays. Here …

Due to their low power consumption, long lifetime and high efficiency, nitrides based white
light-emitting-diodes (LEDs) have long been considered to be a promising technology for …

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available,
the search for an efficient red LED based on GaN is ongoing. The realization of this LED is …

Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …

The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed
for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands …

Current injection efficiency and its impact on efficiency-droop in InGaN single quantum well
(QW) based light-emitting diodes (LEDs) are investigated. The analysis is based on current …

The fabrication studies of silica/polystyrene (PS) colloidal microlens arrays with various
aspect ratios were performed on the III-nitride light-emitting diodes (LEDs). The use of …