57 ABSTRACT A thin film transistor includes: a substrate; a gate electrode, a source
electrode and a drain electrode formed above the substrate; and an insulating film and a …

A systematic study has been performed to reveal the role of atomic hydrogen in chemical
annealing, where the deposition of a thin layer and treatment with atomic hydrogen are …

In our previous paper, we proposed a novel preparation technique termed" Chemical
annealing" to make a rigid and stable Si-network. In this letter, with the aim of the …

Hydrogenated amorphous silicon oxygen alloy (a-SiO: H) films have been prepared at a
temperature of 200° C by a rf plasma deposition process. A controlled widening in the …

Significant improvement in the microcrystallization in Si: H network has been demonstrated
by introducing layer-by-layer (LBL) growth and H-plasma treatment on the stacking layers …

Stacked layer Si: H films deposited by interrupted growth and H-plasma exposure were
characterized by optical and IR absorption, Raman scattering, TEM and PL studies …

Micro-Raman and ultraviolet ellipsometry studies have been performed on μc-Si: H films
prepared by increasing the H 2 dilution to the Ar-assisted SiH 4 plasma in rf glow discharge …

Evidence of inversion in GaAs metal-oxide-semiconductor capacitors with Hf O 2 gate
dielectrics and α-Si∕ Si O 2 interlayers is reported. Capacitors formed on n-Ga As with …

Growth interruption and H-plasma exposure on stacking layers provide an intellectually
challenging route for the deposition and control of Si nanostructures. Atomic H of the plasma …

Gas phase reactions of CF x (x= 1–3) radicals and F atoms in an electron cyclotron
resonance (ECR) downstream plasma have been investigated at 300 W and a CHF3 …