High-κ gate dielectrics: Current status and materials properties considerations
GD Wilk, RM Wallace, JM Anthony - Journal of applied physics, 2001 - pubs.aip.org
Many materials systems are currently under consideration as potential replacements for SiO
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
2 as the gate dielectric material for sub-0.1 μm complementary metal–oxide–semiconductor …
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
High-κ dielectric materials for microelectronics
RM Wallace, GD Wilk - Critical reviews in solid state and materials …, 2003 - Taylor & Francis
High-κ Dielectric Materials for Microelectronics Page 1 Critical Reviews in Solid State and
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …
Materials Sciences, 28:231–285, 2003 Copyright C Taylor and Francis Inc. ISSN: 1040-8436 …
Mn-Stabilized Zirconia: From Imitation Diamonds to a New Potential High- Ferromagnetic Spintronics Material
From the basis of ab initio electronic structure calculations which include the effects of
thermally excited magnetic fluctuations, we predict Mn-stabilized cubic zirconia to be …
thermally excited magnetic fluctuations, we predict Mn-stabilized cubic zirconia to be …
Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide
K Kukli, K Forsgren, J Aarik, T Uustare, A Aidla… - Journal of Crystal …, 2001 - Elsevier
ZrO2 films were grown on Si and SiO2 substrates in the temperature range of 250–500° C
using atomic layer deposition (ALD) technique. ZrI4 and H2O–H2O2 solution were used as …
using atomic layer deposition (ALD) technique. ZrI4 and H2O–H2O2 solution were used as …
Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor
Abstract films were grown from and on p-Si (100) substrates using the atomic layer
deposition technique. The influence of deposition conditions on the dielectric properties of …
deposition technique. The influence of deposition conditions on the dielectric properties of …
Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition
JB Cheng, AD Li, QY Shao, HQ Ling, D Wu… - Applied surface …, 2004 - Elsevier
Ultrathin La2O3 gate dielectric films were prepared on Si substrate using La (tmhd) 3 source
by low pressure metalorganic chemical vapor deposition (MOCVD). The growth processing …
by low pressure metalorganic chemical vapor deposition (MOCVD). The growth processing …
Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process
It was demonstrated that ZrO2 thin films can be grown in the ZrCl4-based atomic layer
deposition process at substrate temperatures of 180–600° C. The films grown on silicon and …
deposition process at substrate temperatures of 180–600° C. The films grown on silicon and …
ZrO2 thin films with controllable morphology and thickness by spin-coated sol–gel method
A spin-coated sol–gel method for the fabrication of highly porous or smooth ultra-thin ZrO2
films was developed. By spin-coating sol solutions, which contained ZrCl4 in anhydrous …
films was developed. By spin-coating sol solutions, which contained ZrCl4 in anhydrous …
Monoclinic zirconium oxide nanostructures synthesized by a hydrothermal route
L Kumari, W Li, D Wang - Nanotechnology, 2008 - iopscience.iop.org
Zirconium oxide (ZrO 2) nanostructures were synthesized by a hydrothermal route. Surface
morphology analysis depicts the formation of rice-grain-like and fiber-like ZrO 2 …
morphology analysis depicts the formation of rice-grain-like and fiber-like ZrO 2 …