In this paper, emerging memory devices are investigated for a promising synaptic device of
neuromorphic computing. Because the neuromorphic computing hardware requires high …

We propose a model describing the operations of hafnium oxide-based resistive random
access memory (RRAM) devices at the microscopic level. Charge carrier and ion transport …

A physics-based compact model of metal-oxide-based resistive-switching random access
memory (RRAM) cell under dc and ac operation modes is presented. In this model, the …

In this paper, we investigate the random telegraph noise (RTN) in hafnium-oxide resistive
random access memories in high resistive state (HRS). The current fluctuations are …

Resistive random access memories are emerging as a new type of memory that has the
potential to combine both the speed of volatile and the retention of nonvolatile memories. It …

This work reports on the bipolar resistive switching (RS) characteristics and possible
applicability to transparent synaptic devices when an ultrathin Al 2 O 3 interfacial layer is …

In this paper, we report about the derivation of a physics-based compact model of random
telegraph noise (RTN) in HfO 2-based resistive random access memory (RRAM) devices …

Flexible resistive switching random access memory (RRAM) devices have drawn significant
attention due to their low power consumption, high speed and simple structure. Halide …

Electroforming and resistive switching in SiO2 materials are investigated by controlling the
annealing temperature, etching time and operating ambient. Thermal anneal in reducing …

This paper presents a physics-based compact model for the program window in HfOx
resistive random access memory devices, defined as the ratio of the resistances in high …