Long range interactions in nanoscale science

RH French, VA Parsegian, R Podgornik, RF Rajter… - Reviews of Modern …, 2010 - APS
Our understanding of the “long range” electrodynamic, electrostatic, and polar interactions
that dominate the organization of small objects at separations beyond an interatomic bond …

Carbon nanotubes for microelectronics: status and future prospects

W Hoenlein, F Kreupl, GS Duesberg… - Materials Science and …, 2003 - Elsevier
As the semiconductor industry faces increasing technological and financial challenges, new
concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make …

Ballistic carbon nanotube field-effect transistors

A Javey, J Guo, Q Wang, M Lundstrom, H Dai - nature, 2003 - nature.com
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to
date has been the presence of a Schottky barrier at the nanotube–metal junctions,,. These …

A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region

J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a circuit-compatible compact model for the intrinsic channel region of
the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This …

Ge/Si nanowire heterostructures as high-performance field-effect transistors

J **ang, W Lu, Y Hu, Y Wu, H Yan, CM Lieber - nature, 2006 - nature.com
Semiconducting carbon nanotubes, and nanowires are potential alternatives to planar metal-
oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique …

[BOK][B] Carbon nanotubes: science and applications

M Meyyappan - 2004 - taylorfrancis.com
Carbon nanotubes, with their extraordinary mechanical and unique electronic properties,
have garnered much attention in the past five years. With a broad range of potential …

A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance …

J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a complete circuit-compatible compact model for single-walled carbon-
nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper …

Tri-gate devices and methods of fabrication

RS Chau, BS Doyle, J Kavalieros, D Barlage… - US Patent …, 2008 - Google Patents
4,906,589 A 3, 1990 Chao 4,996,574 A 2f1991 Shirasaki et al. 5,124,777 A 6, 1992 Lee
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …

Method of forming a metal oxide dielectric

JK Brask, BS Doyle, J Kavalleros, M Doczy… - US Patent …, 2008 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
surface and a first and second laterally opposite sidewalls as formed on an insulating …

Nonplanar transistors with metal gate electrodes

JK Brask, BS Doyle, ML Doczy, RS Chau - US Patent 7,105,390, 2006 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
Surface and a first and second laterally opposite sidewalls as formed on an insulating …