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Long range interactions in nanoscale science
Our understanding of the “long range” electrodynamic, electrostatic, and polar interactions
that dominate the organization of small objects at separations beyond an interatomic bond …
that dominate the organization of small objects at separations beyond an interatomic bond …
Carbon nanotubes for microelectronics: status and future prospects
As the semiconductor industry faces increasing technological and financial challenges, new
concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make …
concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make …
Ballistic carbon nanotube field-effect transistors
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to
date has been the presence of a Schottky barrier at the nanotube–metal junctions,,. These …
date has been the presence of a Schottky barrier at the nanotube–metal junctions,,. These …
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region
J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a circuit-compatible compact model for the intrinsic channel region of
the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This …
the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This …
Ge/Si nanowire heterostructures as high-performance field-effect transistors
Semiconducting carbon nanotubes, and nanowires are potential alternatives to planar metal-
oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique …
oxide-semiconductor field-effect transistors (MOSFETs) owing, for example, to their unique …
[BOK][B] Carbon nanotubes: science and applications
M Meyyappan - 2004 - taylorfrancis.com
Carbon nanotubes, with their extraordinary mechanical and unique electronic properties,
have garnered much attention in the past five years. With a broad range of potential …
have garnered much attention in the past five years. With a broad range of potential …
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance …
J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a complete circuit-compatible compact model for single-walled carbon-
nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper …
nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper …
Tri-gate devices and methods of fabrication
RS Chau, BS Doyle, J Kavalieros, D Barlage… - US Patent …, 2008 - Google Patents
4,906,589 A 3, 1990 Chao 4,996,574 A 2f1991 Shirasaki et al. 5,124,777 A 6, 1992 Lee
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …
5,338,959 A 8, 1994 Kim et al. 5,346,839 A 9, 1994 Sundaresan................. 438/164 …
Method of forming a metal oxide dielectric
JK Brask, BS Doyle, J Kavalleros, M Doczy… - US Patent …, 2008 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
surface and a first and second laterally opposite sidewalls as formed on an insulating …
surface and a first and second laterally opposite sidewalls as formed on an insulating …
Nonplanar transistors with metal gate electrodes
JK Brask, BS Doyle, ML Doczy, RS Chau - US Patent 7,105,390, 2006 - Google Patents
(57) ABSTRACT A semiconductor device comprising a semiconductor body having a top
Surface and a first and second laterally opposite sidewalls as formed on an insulating …
Surface and a first and second laterally opposite sidewalls as formed on an insulating …