Niobium oxides and niobates physical properties: Review and prospects

C Nico, T Monteiro, MPF Graça - Progress in Materials Science, 2016 - Elsevier
For the last 75 years several studies have been reporting on the physical properties of
niobium oxides, but there is still many contradictory, inconsistent and insufficient information …

Nanoscale resistive switching memory devices: a review

S Slesazeck, T Mikolajick - Nanotechnology, 2019 - iopscience.iop.org
In this review the different concepts of nanoscale resistive switching memory devices are
described and classified according to their I–V behaviour and the underlying physical …

Third-order nanocircuit elements for neuromorphic engineering

S Kumar, RS Williams, Z Wang - Nature, 2020 - nature.com
Current hardware approaches to biomimetic or neuromorphic artificial intelligence rely on
elaborate transistor circuits to simulate biological functions. However, these can instead be …

Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks

Q Duan, Z **g, X Zou, Y Wang, K Yang… - Nature …, 2020 - nature.com
As a key building block of biological cortex, neurons are powerful information processing
units and can achieve highly complex nonlinear computations even in individual cells …

A heterogeneously integrated spiking neuron array for multimode‐fused perception and object classification

J Zhu, X Zhang, R Wang, M Wang, P Chen… - Advanced …, 2022 - Wiley Online Library
Multimode‐fused sensing in the somatosensory system helps people obtain comprehensive
object properties and make accurate judgments. However, building such multisensory …

[HTML][HTML] Brain-inspired computing via memory device physics

D Ielmini, Z Wang, Y Liu - APL Materials, 2021 - pubs.aip.org
In our brain, information is exchanged among neurons in the form of spikes where both the
space (which neuron fires) and time (when the neuron fires) contain relevant information …

Physical origins of current and temperature controlled negative differential resistances in NbO2

S Kumar, Z Wang, N Davila, N Kumari, KJ Norris… - Nature …, 2017 - nature.com
Negative differential resistance behavior in oxide memristors, especially those using NbO2,
is gaining renewed interest because of its potential utility in neuromorphic computing …

Programmable neuronal-synaptic transistors based on 2D MXene for a high-efficiency neuromorphic hardware network

X Zhang, S Wu, R Yu, E Li, D Liu, C Gao, Y Hu, T Guo… - Matter, 2022 - cell.com
Develo** a high-efficiency neuromorphic hardware network is essential to achieve
complex artificial intelligence. Here, for the first time, we propose a multi-neuromorphic …

On local activity and edge of chaos in a NaMLab memristor

A Ascoli, AS Demirkol, R Tetzlaff, S Slesazeck… - Frontiers in …, 2021 - frontiersin.org
Local activity is the capability of a system to amplify infinitesimal fluctuations in energy.
Complex phenomena, including the generation of action potentials in neuronal axon …

Non-thermal resistive switching in Mott insulator nanowires

Y Kalcheim, A Camjayi, J Del Valle, P Salev… - Nature …, 2020 - nature.com
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which
triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT …