Complex internal bias fields in ferroelectric hafnium oxide

T Schenk, M Hoffmann, J Ocker, M Pesic… - … applied materials & …, 2015 - ACS Publications
For the rather new hafnia-and zirconia-based ferroelectrics, a lot of questions are still
unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up,(2) …

[PDF][PDF] Hysteresis in piezoelectric and ferroelectric materials

D Damjanovic - Science of hysteresis, 2006 - infoscience.epfl.ch
Piezoelectric and ferroelectric materials are widely used in many areas of technology and
science. The sensors based on the piezoelectric effect transform mechanical signals into …

Domain pinning: Comparison of hafnia and PZT based ferroelectrics

FPG Fengler, M Pešić, S Starschich… - Advanced Electronic …, 2017 - Wiley Online Library
Even though many studies on the field cycling behavior of ferroelectric hafnium oxide have
recently been published, the issue is still not fully understood. The initial increase of …

On the relationship between field cycling and imprint in ferroelectric Hf0. 5Zr0. 5O2

FPG Fengler, M Hoffmann, S Slesazeck… - Journal of Applied …, 2018 - pubs.aip.org
Manifold research has been done to understand the detailed mechanisms behind the
performance instabilities of ferroelectric capacitors based on hafnia. The wake-up together …

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

F Yang - Advanced Electronic Materials, 2024 - Wiley Online Library
Al1− xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It
combines exceptional switchable polarization (80–165 µC cm− 2), highly tunable coercive …

Superior piezoelectric performance with high operating temperature in bismuth ferrite-based ternary ceramics

Y Huang, L Zhang, R **g, Y Yang, V Shur… - Journal of Materials …, 2024 - Elsevier
Due to the thermal depolarization effect, adequate piezoelectric performance with high
operating temperature is regarded to be challenging to accomplish concurrently in …

Multiscale Modeling of Al0.7Sc0.3N-based FeRAM: the Steep Switching, Leakage and Selector-free Array

C Liu, Q Wang, W Yang, T Cao, L Chen… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
In this work, by experiments and material calculations, the steep polarization switching and
the leakage in ferroelectric Al 0.7 Sc 0.3 N are investigated. The material calculations …

Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations

A Chouprik, S Zakharchenko… - … applied materials & …, 2018 - ACS Publications
Because of their full compatibility with the modern Si-based technology, the HfO2-based
ferroelectric films have recently emerged as viable candidates for application in nonvolatile …

Insights into the origin of cooperative effects in the spin transition of [Fe (NH2trz) 3](NO3) 2: The role of supramolecular interactions evidenced in the crystal structure of …

MM Dirtu, C Neuhausen, AD Naik, A Rotaru… - Inorganic …, 2010 - ACS Publications
The thermally induced hysteretic spin transition (ST) that occurs in the polymeric chain
compound [Fe (NH2trz) 3](NO3) 2 (1) above room temperature (T c↑= 347 K, T c↓= 314 K) …

Alignment of polarization against an electric field in van der Waals ferroelectrics

SM Neumayer, L Tao, A O'hara, J Brehm, M Si… - Physical Review …, 2020 - APS
Polarization in ferroelectrics can be switched in the direction of an applied electric field by
dipole reorientation, enabling numerous applications and fundamental phenomena. Here …