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RF performance and small-signal parameter extraction of junctionless silicon nanowire MOSFETs
This paper presents a radio-frequency (RF) model and extracted model parameters for
junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors …
junctionless silicon nanowire (JLSNW) metal-oxide-semiconductor field-effect transistors …
Temperature analysis of DMGC CGAA FET for future deep space and military applications: an insight into Analog/RF/Self-Heating/Linearity
This manuscript introduces a pioneering investigation on the temperature effects of Dual
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Impact of gate material engineering (GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless …
Abstract In this paper Gate Material Engineered (GME) Gate-Stack (GS) silicon nanowire
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Schottky-Barrier (SB) Gate All Around (GAA) MOSFET and Single Material Gate Stack …
Effects of Au nanoslabs on the performance of CdO thin films designed for optoelectronic applications
In this work, the effect of 50 nm thick gold nanosheets on the structural, morphological,
optical and electrical properties of stacked layers of CdO are investigated. The insertion of …
optical and electrical properties of stacked layers of CdO are investigated. The insertion of …
Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes
This paper reports the radio frequency (RF) and linearity performance of transistors using
high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting …
high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting …
Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM‐CSG)
N Trivedi, M Kumar, S Haldar… - … Journal of Numerical …, 2016 - Wiley Online Library
This paper presents physics based analytical model for center potential, electric field and
subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate …
subthreshold drain current of Junctionless Accumulation Mode Cylindrical Surrounding Gate …
Effect of trench depth and gate length shrinking assessment on the analog and linearity performance of TGRC-MOSFET
A Kumar - Superlattices and Microstructures, 2017 - Elsevier
This paper discusses the impact of trench depth (Negative Junction Depth (NJD)) and gate
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
length (LG) shrinking on analog and linearity performance of Transparent Gate Recessed …
Analog/RF performance analysis of inner gate engineered junctionless Si nanotube
This paper investigates the analog/RF performance of inner gate engineered junctionless
silicon nanotube (JLSiNT) FETs. We demonstrate that the RF performance of symmetric …
silicon nanotube (JLSiNT) FETs. We demonstrate that the RF performance of symmetric …
Gate all around MOSFET with vacuum gate dielectric for improved hot carrier reliability and RF performance
In this paper, gate all around (GAA) MOSFET with vacuum gate dielectric is proposed for the
first time for improved hot carrier reliability and RF performance. Analog and RF …
first time for improved hot carrier reliability and RF performance. Analog and RF …
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis
The paper presents a simulation study of Nanoscale Cylindrical Surrounding Gate (SRG)
MOSFET with localised interface charges. The objective of the present work is to study the …
MOSFET with localised interface charges. The objective of the present work is to study the …