The monolithic hetero-integration of III/V materials on Si substrates could enable a multitude
of new device applications and functionalities which would benefit from both the excellent …

Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …

We introduce a new design space for optimizing III-V devices monolithically grown on
Silicon substrates by extending the concept of nano-ridge engineering from binary …

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic
integration of lattice-mismatched III-V devices on Si substrates. It has been successfully …

Here, we study the morphology and dislocation dynamics of metalorganic vapor phase
epitaxy (MOVPE)-grown GaP on a V-groove Si substrate. We show that Si from the substrate …

High crystalline quality semiconductor materials are critical for many electronic and
optoelectronic applications. As the need grows for material bandgaps beyond those of …

Selective area growth of III–V compound materials into trenches fabricated on silicon (Si)
substrates allows to combine aspect ratio trap** with nano-ridge engineering (NRE). This …

Nano-ridge engineering (NRE) is a novel heteroepitaxial integration approach for III–V
devices on Si substrates. It starts with selective area growth in narrow trenches for misfit …

Shrinking semiconductor device dimensions requires extensive R&D in all areas, inclusive
of the materials characterization techniques and methodologies commonly used. With …

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique
to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal …