Arsenic‐Induced Growth of Dodecagonal GaN Microrods with Stable a‐Plane Walls
P Ciechanowicz, S Gorantla… - Advanced Optical …, 2021 - Wiley Online Library
Nano‐and micro‐rods of GaN offer many functionalities that are not present in regular flat
nanostructures. Therefore, development of new growth methods of such structures is a hot …
nanostructures. Therefore, development of new growth methods of such structures is a hot …
Creation of regular arrays of faceted AlN nanostructures via a combined top-down, bottom-up approach
The realisation of spatially-determined, uniform arrays of faceted aluminium nitride (AlN)
nanostructures has had limited exploration, largely due to the fact that selective area growth …
nanostructures has had limited exploration, largely due to the fact that selective area growth …
Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED
AlGaN alloys find important applications in UV emitters and detectors, as well as in high-
power high-frequency electronics. While reflection high energy electron diffraction (RHEED) …
power high-frequency electronics. While reflection high energy electron diffraction (RHEED) …
AlGaN multiple quantum wells by PA-MBE for deep UV emission: Effect of growth interruptions
Growth of AlGaN multiple quantum wells by Plasma Assisted-Molecular Beam Epitaxy has
been optimized for use in deep ultraviolet light emitting diodes. A series of samples were …
been optimized for use in deep ultraviolet light emitting diodes. A series of samples were …
Spontaneous growth of III-nitride 1D and 0D nanostructures on to vertical nanorod arrays
In this work, we report on the growth of AlGaN nanostructures by the droplet epitaxy process.
Initially, well-oriented vertical AlN nanorod clusters were grown on to c-plane sapphire …
Initially, well-oriented vertical AlN nanorod clusters were grown on to c-plane sapphire …