Thermoreflectance-based techniques, such as pump–probe thermoreflectance (pump–
probe TR) and thermoreflectance thermal imaging (TTI), have emerged as the powerful and …

In this article, an ac conductance method has been successfully employed to extract the
thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The …

The increasing demand for tightly integrated gallium nitride high electron mobility transistors
(HEMT) into electronics systems requires accurate thermal evaluation. While these devices …

The thermal transient behaviour of GaN HEMT structures is studied using an integrated
sensor placed in the close vicinity of a heat source. It is demonstrated that the method can …

Simultaneous high-spatial and high-temporal resolution channel-temperature
characterization methods are in great demand but still lacking for GaN devices. In this work …

This work presents an extraction method for the thermal resistance and the thermal
capacitance of GaN power high-electron mobility transistors (HEMTs). An electro-thermal …

The influence of dynamic thermal coupling on gallium nitride (GaN) monolithically
microwave integrated circuit (MMIC) power amplifiers (PAs) is investigated through transient …

The dynamic thermal coupling within gallium nitride (GaN) high electron mobility transistors
(HEMTs) is characterized and modeled in a finite element method (FEM) solver to determine …

This work proposes a semi-physical equivalent circuit model for GaN-based high electron
mobility transistors (GaN HEMTs), taking into account the non-ideal effects of both the …

In this paper, a novel hybrid‐scaling rule for GaN high‐electron‐mobility transistors (HEMTs)
scalable large‐signal model with self‐heating effect is proposed. Due to the complex …