Synthesis and applications of III–V nanowires
E Barrigón, M Heurlin, Z Bi, B Monemar… - Chemical …, 2019 - ACS Publications
Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …
dimensional examples, have developed into one of the most intensely studied fields of …
Emergence of high quality sputtered III-nitride semiconductors and devices
This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …
[HTML][HTML] Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films
In nonlinear optics, significant effort is concentrated on improving the strength and efficiency
of interactions; however, experimentally investigating nonlinear materials is a complex, time …
of interactions; however, experimentally investigating nonlinear materials is a complex, time …
Positive impurity size effect in degenerate Sn-doped GaN prepared by pulsed sputtering
Y Nishikawa, K Ueno, A Kobayashi… - Applied Physics Letters, 2023 - pubs.aip.org
This study reports on the epitaxial growth of heavily Sn-doped GaN films by pulsed
sputtering deposition (PSD) and their basic characteristics, which include electrical, optical …
sputtering deposition (PSD) and their basic characteristics, which include electrical, optical …
Ge doped GaN and Al0. 5Ga0. 5N-based tunnel junctions on top of visible and UV light emitting diodes
The use of tunnel junctions (TJs) is a potential solution in blue light-emitting diodes (LEDs)
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
to poor p-contacts, replacing it with another n-contact. TJs are even more advantageous for …
[HTML][HTML] Electron transport properties of degenerate n-type GaN prepared by pulsed sputtering
We report a systematic investigation of the transport properties of highly degenerate
electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering …
electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering …
Self-compensation in heavily Ge doped AlGaN: A comparison to Si do**
Self-compensation in Ge-and Si-doped Al 0.3 Ga 0.7 N has been investigated in terms of the
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
formation of III vacancy and donor-vacancy complexes. Both Ge-and Si-doped AlGaN layers …
Electrical and optical properties of heavily Ge-doped AlGaN
We report the effect of germanium as n-type dopant on the electrical and optical properties of
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …
Electrical transport properties of highly doped N-type GaN materials
L Konczewicz, E Litwin-Staszewska… - Semiconductor …, 2022 - iopscience.iop.org
This paper presents a comparative study of electron transport phenomena in n-type gallium
nitride strongly doped, above the Mott transition, with silicon and germanium. The samples …
nitride strongly doped, above the Mott transition, with silicon and germanium. The samples …
Highly conductive Ge-doped GaN epitaxial layers prepared by pulsed sputtering
Abstract Highly conductive Ge-doped GaN epitaxial layers were grown by low-temperature
pulsed sputtering, and their fundamental structural and electrical properties were …
pulsed sputtering, and their fundamental structural and electrical properties were …