Germanium is being actively considered by the semiconductor community as a mainstream
material for nanoelectronic applications. Germanium has advantageous materials …

In this review, we report on fabrication paths, challenges, and emerging solutions to
integrate group-IV epitaxial quantum dots (QDs) as active light emitters into the existing …

Self-diffusion in silicon and the contribution of vacancies and self-interstitials have been
controversially discussed for 50 yr. Most recent results show that the intrinsic silicon self …

Recently, it was shown that lasing from epitaxial Ge quantum dots (QDs) on Si substrates
can be obtained if they are partially amorphized by Ge ion bombardment (GIB). Here, we …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

We study point-defect diffusion in crystalline silicon using the kinetic activation-relaxation
technique (k-ART), an off-lattice kinetic Monte Carlo method with on-the-fly catalog building …

In the current framework, the n-SnO2/n-CdS/p-Si heterostructure was fabricated at different
tin dioxide (SnO2) thicknesses (d= 30, 60, 90, 120, 150, and 180 nm). In this device, nickel …

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications.
The understanding of oxygen related defects at a fundamental level is essential to further …

The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

Aluminium grain boundary diffusivities were measured in pure and Y-doped polycrystalline
α-Al 2 O 3 using the artificial aluminium isotope 26 Al as a tracer. An advanced preparation …