Abstracte InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and
brightness, are entering the display industry. However, a significant gap remains between …

This study resumes the status of our knowledge about the formation of extended and
intrinsic defects in ion implanted 4H-SiC homo-epitaxial wafers during a high temperature …

We demonstrate normally-off 400° C operation of n-channel and p-channel junction field-
effect transistors (JFETs) fabricated by an ion implantation into a common high-purity semi …

The temperature dependence of the Hall hole density and the Hall mobility data of heavy
doped p-type 4H-SiC (Al) materials obtained by Al+ ion implantation have been analysed in …

Bandgaps and defect-state energies are key electrical characteristics of semiconductor
materials and devices, thereby necessitating nanoscale analysis with a heightened …

The implantation of aluminum into 4H-SiC is studied using secondary ion mass
spectrometry. In particular, two-dimensional concentration profiles are obtained, which allow …

As a semiconductor with a wide bandgap, 4H silicon carbide (4H-SiC) has considerable
potential for high-temperature and high-power devices. It is widely established that p-type …

Ion implantation is a commonly used process step in 4H-SiC device manufacturing to
implement precise concentrations of dopant atoms in selected areas and depths. This paper …

Lateral spreads of Al and P atoms implanted (10∼ 700 keV) into a high-purity semi-
insulating 4H silicon carbide (SiC) substrate have been experimentally investigated …

A strong channeling effect is observed for the ions of Al and N implanted in 4H–SiC due to
its crystalline structure. This effect causes difficulties in subsequent accurate estimation of …