Boundary conditions for open quantum systems driven far from equilibrium

WR Frensley - Reviews of Modern Physics, 1990 - APS
This is a study of simple kinetic models of open systems, in the sense of systems that can
exchange conserved particles with their environment. The system is assumed to be one …

Colloquium: Nonlinear collective interactions in quantum plasmas with degenerate electron fluids

PK Shukla, B Eliasson - Reviews of Modern Physics, 2011 - APS
The current understanding of some important nonlinear collective processes in quantum
plasmas with degenerate electrons is presented. After reviewing the basic properties of …

The quantum hydrodynamic model for semiconductor devices

CL Gardner - SIAM Journal on Applied Mathematics, 1994 - SIAM
The classical hydrodynamic equations can be extended to include quantum effects by
incorporating the first quantum corrections. These quantum corrections are O(ℏ^2). The full …

[BOOK][B] Computational Electronics: semiclassical and quantum device modeling and simulation

D Vasileska, SM Goodnick, G Klimeck - 2017 - books.google.com
Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

Wigner-function model of a resonant-tunneling semiconductor device

WR Frensley - Physical Review B, 1987 - APS
A model of an open quantum system is presented in which irreversibility is introduced via
boundary conditions on the single-particle Wigner distribution function. The Wigner function …

Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling

DK Ferry, JR Zhou - Physical Review B, 1993 - APS
We solve a form of the Bloch equation for the density matrix in a manner that identifies a
''quantum''correction to the classical potential. This correction is given by the difference …

Process-variation effect, metal-gate work-function fluctuation, and random-dopant fluctuation in emerging CMOS technologies

Y Li, CH Hwang, TY Li, MH Han - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations
consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and …

Simulation of ultra-small GaAs MESFET using quantum moment equations

JR Zhou, DK Ferry - IEEE Transactions on Electron Devices, 1992 - ieeexplore.ieee.org
Ultra-small MESFETs have characteristic lengths comparable to quantum lengths:
wavelength, mean free path, etc. In a first attempt to incorporate these quantum lengths, the …

Random-dopant-induced variability in nano-CMOS devices and digital circuits

Y Li, CH Hwang, TY Li - IEEE Transactions on Electron Devices, 2009 - ieeexplore.ieee.org
The impact of the number and position of discrete dopants on device characteristics is
crucial in determining the transient behavior of nanoscale circuits. An experimentally …

Investigation of ballistic transport through resonant-tunnelling quantum wells using Wigner function approach

U Ravaioli, MA Osman, W Pötz, N Kluksdahl, DK Ferry - Physica B+ C, 1985 - Elsevier
We present a Wigner function study of quantum ballistic transport through resanant-
tunneling quantum wells, as found in devices which employ a double barrier formed by …