An overview of radiation effects on electronic devices under severe accident conditions in NPPs, rad-hardened design techniques and simulation tools

Q Huang, J Jiang - Progress in Nuclear Energy, 2019 - Elsevier
New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

A review on SEU mitigation techniques for FPGA configuration memory

TS Nidhin, A Bhattacharyya, RP Behera… - IETE Technical …, 2018 - Taylor & Francis
Single event upset (SEU) has become one of the major threats to dependable application
development targeted at safety systems in field programmable gate arrays (FPGAs). This …

Low cost and highly reliable radiation hardened latch design in 65 nm CMOS technology

C Qi, L **ao, J Guo, T Wang - Microelectronics reliability, 2015 - Elsevier
As a consequence of technology scaling down, gate capacitances and stored charge in
sensitive nodes are decreasing rapidly, which makes CMOS circuits more vulnerable to …

Enhanced memory reliability against multiple cell upsets using decimal matrix code

J Guo, L **ao, Z Mao, Q Zhao - IEEE Transactions on Very …, 2013 - ieeexplore.ieee.org
Transient multiple cell upsets (MCUs) are becoming major issues in the reliability of
memories exposed to radiation environment. To prevent MCUs from causing data …

[КНИГА][B] Resilient computer system design

V Castano, I Schagaev - 2015 - Springer
New areas of ICT applications require complete redesign of computer systems to address
challenges of extreme reliability, high performance and power efficiency. Up to now there …

SEU tolerant memory using error correction code

X She, N Li, DW Jensen - IEEE Transactions on Nuclear …, 2012 - ieeexplore.ieee.org
With decreasing circuit lithography dimensions and increasing memory densities, an SEU
may affect multiple adjacent memory cells. This paper presents an SEU hardened memory …

New SEC-DED-DAEC codes for multiple bit upsets mitigation in memory

Z Ming, XL Yi, LH Wei - … Conference on VLSI and System-on …, 2011 - ieeexplore.ieee.org
Nowadays, multiple bit upsets (MBUs) have been widely investigated in memories.
Conventional single error correction and double error detection (SEC-DED) codes are …

Reliability of memories protected by multibit error correction codes against MBUs

Z Ming, XL Yi, L Chang, ZJ Wei - IEEE Transactions on Nuclear …, 2011 - ieeexplore.ieee.org
As technology scales, more and more memory cells can be placed in a die. Therefore, the
probability that a single event induces multiple bit upsets (MBUs) in adjacent memory cells …

Efficient two-dimensional error codes for multiple bit upsets mitigation in memory

M Zhu, L **ao, S Li, Y Zhang - … on Defect and Fault Tolerance in …, 2010 - ieeexplore.ieee.org
As technology scales, more and more memory cells can be placed in a die. Multiple bit
upsets (MBUs) induced by a single event in adjacent memory cells gets significantly …

SEU hardened flip-flop based on dynamic logic

SX Xuan, N Li, J Tong - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
A conventional master-slave flip-flop is very sensitive to particle strike that causes an SEU.
When the clock is high, an SEU may upset the logic state of the master latch resulting in a …