Back-end-of-line-compatible scaled InGaZnO transistors by atomic layer deposition

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Strong immunity to drain-induced barrier lowering in ALD-grown preferentially oriented indium gallium oxide transistors

GB Kim, T Kim, SW Bang, JS Hur, CH Choi… - … Applied Materials & …, 2024 - ACS Publications
Drain-induced barrier lowering (DIBL) is one of the most critical obstacles degrading the
reliability of integrated circuits based on miniaturized transistors. Here, the effect of a …
Išsaugoti Cituoti Cituoja 4 Susiję straipsniai Visos 3 versijos

Contact length scaling in dual-gate IGZO TFTs

Z Wu, J Niu, C Lu, Z Bai, K Chen, Z Wu… - IEEE Electron …, 2024 - ieeexplore.ieee.org
In this work, the contact length scaling in dual-gate (DG) InGaZnO (IGZO) thin film transistors
(TFTs) was experimentally investigated. With source/drain metal of Nickel (Ni) deposited in …
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Advancements and Hurdles in Contact Engineering for Miniaturized Sub-Micrometer Oxide Semiconductor Devices

JH Jeong, JE Oh, D Kim, D Ha, JK Jeong - Journal of Materials …, 2025 - pubs.rsc.org
With conventional silicon-based devices approaching their physical scaling limits,
alternative channel materials, such as transition metal dichalcogenides and oxide …
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High mobility of IGO/IGZO double-channel thin-film transistors by atomic layer deposition

P Wen, C Peng, Z Chen, X Ding, FH Chen… - Applied Physics …, 2024 - pubs.aip.org
In this paper, top-gate thin-film transistors (TFTs) of two stacked double-channel layers
derived from atomic layer deposition in combination with the plasma-enhanced chemical …
Išsaugoti Cituoti Cituoja 5 Susiję straipsniai Visos 3 versijos

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 C and Downscaling of Channel

B Luo, X Wu, W Meng, W ** of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment
J Zhang, H Zhao, X Ye, M Jia, G Lin… - … Applied Materials & …, 2024 - ACS Publications
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
Išsaugoti Cituoti Susiję straipsniai Visos 3 versijos