GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical
data communications, particularly short range. It also is being prospected for applications in …

We investigate the effect of channel layer thickness on effective mobility (μeff) in the sub-10-
nm regime of amorphous indium-gallium-zinc-oxide thin-film transistors (α-IGZO TFTs). TFT …

Germanium-tin is a promising semiconductor alloy system for novel light emitting devices
and optical sensors in the mid-IR region. For sufficiently high Sn compositions, the material …

This paper presents a novel FDSOI FinFETs with SiGe channel/Si cap layer (35 nm/5 nm)
formed on SOI wafers with 20 nm Si body. Electrical characterization result shows that JL …

For junctionless FETs (JLFETs), an optimal ohmic contact is needed to achieve maximum
drive current. The scaling of the source/drain (S/D) contact area impacts the contact …

The undoped 4-stacked Ge 0.9 Sn 0.1 nanosheets sandwiched by double Ge 0.95 Sn 0.05
caps without parasitic Ge channels underneath are realized by a radical-based highly …

The eight stacked Ge 0.9 Sn 0.1 ultrathin bodies down to 3 nm with high and eight stacked
Ge 0.9 Sn 0.1 thick nanosheets with high per stack are demonstrated. For the eight stacked …

Ge1-x Sn x alloys form a heterogeneous material system with high potential for applications
in both optoelectronic and high-speed electronics devices. The attractiveness of Ge1-x Sn x …