Role of local atomic short-range order distribution in alloys: Why it matters in Si-Ge-Sn alloys
Short-range order (SRO) in alloys refers to deviations from a perfectly random distribution of
atoms in lattice sites within a short distance. Conventionally, the degree of the deviations …
atoms in lattice sites within a short distance. Conventionally, the degree of the deviations …
Advances in modeling complex materials: The rise of neuroevolution potentials
P Ying, C Qian, R Zhao, Y Wang, F Ding… - ar** growth of GeSn on Si for midwave infrared applications
H Stanchu, G Abernathy, J Grant… - Journal of Vacuum …, 2024 - pubs.aip.org
The development of all-group IV GeSn materials on Si substrates is of interest for monolithic
midwave infrared (MWIR) silicon photonics. Despite their great potential, the growth of high …
midwave infrared (MWIR) silicon photonics. Despite their great potential, the growth of high …
Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials
GeSn alloys hold promise for silicon-compatible integrated applications in electronics,
photonics, and topological quantum devices. However, understanding their intricate …
photonics, and topological quantum devices. However, understanding their intricate …
Polarization-resolved Raman spectroscopy reveals the atomic local ordering in silicon germanium tin epitaxial alloys
Ternary SiGeSn alloys have emerged as a promising material system for applications in
diverse fields such as photonics, electronics, and thermoelectrics. Its development still …
diverse fields such as photonics, electronics, and thermoelectrics. Its development still …
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and
Temperature dependence of vibrational modes in semiconductors depends on lattice
thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two …
thermal expansion and anharmonic phonon-phonon scattering. Evaluating the two …
Temperature and Ge Fraction Dependance of Broad Peaks in Raman Spectra from Ge-Rich Silicon Germanium Thin Films
Y Maeda, R Yokogawa, A Ogura - … Society Meeting Abstracts …, 2024 - iopscience.iop.org
Background and Objective Silicon-germanium (SiGe) is applied to the next-generation
electric and thermoelectric devices because it has higher hole mobility than Si and low …
electric and thermoelectric devices because it has higher hole mobility than Si and low …