Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
Power electronic transformer-based railway traction systems: Challenges and opportunities
J Feng, WQ Chu, Z Zhang… - IEEE Journal of Emerging …, 2017 - ieeexplore.ieee.org
In this paper, power electronic transformer (PET)-based railway traction systems are
comprehensively reviewed according to the unique application features and requirements …
comprehensively reviewed according to the unique application features and requirements …
Single-phase T-type inverter performance benchmark using Si IGBTs, SiC MOSFETs, and GaN HEMTs
E Gurpinar, A Castellazzi - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
In this paper, benchmark of Si IGBT, SiC MOSFET, and Gallium nitride (GaN) HEMT power
switches at 600-V class is conducted in single-phase T-type inverter. Gate driver …
switches at 600-V class is conducted in single-phase T-type inverter. Gate driver …
Influences of device and circuit mismatches on paralleling silicon carbide MOSFETs
This paper addresses the influences of device and circuit mismatches on paralleling the
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
silicon carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental …
A novel active gate driver for improving switching performance of high-power SiC MOSFET modules
Y Yang, Y Wen, Y Gao - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …
mosfets) are widely used in higher power density and higher efficiency power electronic …
Review of packaging schemes for power module
F Hou, W Wang, L Cao, J Li, M Su, T Lin… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
SiC devices are promising for outperforming Si counterparts in high-frequency applications
due to its superior material properties. Conventional wirebonded packaging scheme has …
due to its superior material properties. Conventional wirebonded packaging scheme has …
Comprehensive topological overview of rolling stock architectures and recent trends in electric railway traction systems
This paper reviews the modern electric propulsion architectures and configurations for
railway traction, which are currently in practice. The development and advancement of …
railway traction, which are currently in practice. The development and advancement of …
20-kW Zero-Voltage-Switching SiC-mosfet Grid Inverter With 300 kHz Switching Frequency
N He, M Chen, J Wu, N Zhu, D Xu - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Although SiC-mosfet has significant advantages on switching performance over traditional
Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the …
Si-IGBT, the switching loss of SiC-mosfet devices at hard switching rises quickly with the …
Modeling and control of a multiport power electronic transformer (PET) for electric traction applications
This paper proposes a multiport power electronic transformer (PET) topology with
multiwinding medium-frequency transformer (MW-MFT) isolation along with the associated …
multiwinding medium-frequency transformer (MW-MFT) isolation along with the associated …
[BOOK][B] Gallium nitride and silicon carbide power devices
BJ Baliga - 2016 - books.google.com
During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …
of gallium nitride and silicon carbide device structures, resulting in experimental …