GaN-based micro-size light-emitting diodes (µLEDs) have a variety of attractive and
distinctive advantages for display, visible-light communication (VLC), and other novel …

This paper mainly describes the status and prospects of GaN-based tunnel junctions grown
by metal-organic vapor-phase epitaxy. GaN-based tunnel junctions are expected to offer an …

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation
was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet …

High wall-plug efficiency (WPE) micro-light-emitting diodes with metalorganic chemical
vapor deposition-grown tunnel junction (TJ) contacts are demonstrated. By employing …

The recent progress in III-nitride tunnel junction (TJ) contacts for optoelectronic devices is
summarized in this review paper. Due to the rapid developments of various III-nitride based …

We report thin, high quality n+ type doped N-polar GaN contact layers grown using metal-
organic chemical vapor deposition with carrier concentration as high as 3.5× 10 20 cm− 3 …

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition
were optimized for minimization of the tunnel junction voltage drop. Two device structures …

Tunnel junctions (TJs) offer alternative designs and promise in some cases improved
performances for nitride-based light-emitting diode (LEDs) and laser diodes (LDs) and are …

A sidewall activation process was optimized for buried magnesium-doped p-GaN layers
yielding a significant reduction in tunnel junction-enabled light emitting diode (LED) forward …

Abstract The InGaN films and GaN/InGaN/GaN tunnel junctions (TJs) were grown on GaN
templates with plasma-assisted molecular beam epitaxy. As the In content increases, the …