Although two-dimensional monolayer transition-metal dichalcogenides reveal numerous
unique features that are inaccessible in bulk materials, their intrinsic properties are often …

In this paper, a Ni-doped MoS2 monolayer (Ni-MoS2) has been proposed as a novel gas
adsorbent to be used in SF6-insulated equipment. Based on the first-principles calculation …

Schottky barriers (SBs) are often formed at the semiconductor/metal contacts and affect the
electrical behavior of semiconductor devices. In particular, SBs are playing a major role in …

Due to their atomically ultrathin thickness, the development of high-performance transition-
metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct …

In this article, we based on the first-principles theory explore the sensing and adsorption
behaviors of Ru-doped MoS2 (Ru-MoS2) monolayer upon two main decomposed gases in …

Methylammonium lead iodide perovskite (MAPbI3) has made a re-entry into the literature
nowadays for its extraordinary characteristics, such as high absorption of light, long carrier …

The fabrication of high‐performance (opto‐) electronic devices based on 2D channel
materials requires the optimization of the charge injection at electrode–semiconductor …

In this work, we report the fabrication of a low power, humidity sensor where platinum
nanoparticles (NPs) decorated few-layered molybdenum disulphide (MoS 2) nanoflakes …

Semiconductor junctions are of great significance for the development of electronic and
optoelectronic devices. Here, controllable switching is demonstrated from a Schottky …

On-chip microscopic energy systems have revolutionized device design for miniaturized
energy storage systems. Many atomically thin materials have provided a unique opportunity …