Atomic scale details of the formation of point defects and their evolution to phase
transformation in silicon (Si) implanted β-Ga 2 O 3 were studied using high resolution …

Significant research effort has been placed into the use of III–V compound semiconductors,
including InGaAs as channel materials in CMOS logic devices due to their superior electron …

An overview of various processing and dopant considerations for the creation of heavily-
doped n-InGaAs is presented. A large body of experimental evidence and theoretical …

The effect of thermal annealing on the net donor concentration and diffusion of Si in In 0.53
Ga 0.47 As is compared for electrically active layers formed by ion implantation versus …

In contrast to prior reports, evidence of concentration-dependent diffusion is reported for Si
implanted In 0.53 Ga 0.47 As. The Fickian and concentration-dependent components of …

The effect of pre-amorphization on the electrical activation of Si implants into In 0.53 Ga 0.47
As is investigated. Electrical measurements show that Si implants into pre-amorphized and …

Integrating III-V semiconductors into next-generation silicon-based transistors is a promising
alternative being considered as a route to faster and more energy-efficient electronic …

Continued effort has been placed on maximizing activation while controlling the diffusion of
silicon do** in InGaAs for present and future complementary metal-oxide semiconductor …

Elevated temperature, nonamorphizing implants of Si+, and a second co-implant of either
Al+, P+, or S+ at varying doses were performed into In 0.53 Ga 0.47 As to observe the effect …

The evolution of implant damage in InGaAs is studied for electrically active Si+ and
isoelectronic P+ implants. Extrinsic loops formed by excess interstitials are shown to be less …