This paper addresses issues of the subtle kinetic changes on the superstructural phase
formation in the technologically important Sb/Si system. The thermal stability of the room …

The Thomas-Fermi approximation is implemented in two coupled n-type δ-doped quantum
wells in Si. An analytical expression for the Hartree-Fock potential is obtained in order to …

AlSb is grown by molecular beam epitaxy. The evolution and the relaxation of the deposited
AlSb layer is investigated by synchrotron-based in situ grazing incidence x-ray diffraction …

The dynamics of adsorption and desorption of Sb on atomically clean dimer reconstructed Si
(001) surface is carefully monitored. Superstructure formation of the Sb/Si (001)-(2× 1) …

The difference in the interface formation of Sb on Si (111)-(7× 7) and Si (100)-(2× 1) surfaces
is studied by in situ adsorption at room temperature and its characterization by X-ray …

The experimental study of the thermodynamic and kinetic properties of the S b/S i (111)
interface reveals a surprising behavior: a 2D phase condensates when the Sb coverage …

The role of kinetics in the superstructure formation of the Sb/Si (001) system is studied using
in situ surface sensitive techniques such as low energy electron diffraction, Auger electron …

Adsorption of Sb at a very low flux rate results in an epitaxial layer-by-layer growth on Si
(111) surface held at room-temperature. Band-bending is not observed for submonolayer Sb …

The growth of Sb nanostructures at submonolayer coverages on the Si (111) 7× 7 surface
was investigated using scanning tunneling microscopy. Sb atoms show a high affinity to …

With the combination of high resolution low energy electron diffraction and a bending
sample technique we have simultaneously studied surface stress and surface structure …