Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide
range of compelling applications in power electronics. In this review, we have explored the …
range of compelling applications in power electronics. In this review, we have explored the …
Post-annealing effects on Si-doped Ga2O3 photodetectors grown by pulsed laser deposition
SH Jeong, TKO Vu, EK Kim - Journal of Alloys and Compounds, 2021 - Elsevier
Abstract We studied Si-doped Ga 2 O 3 photodetectors with a metal-semiconductor-metal
structure that were fabricated using pulsed laser deposition and a post-annealing process …
structure that were fabricated using pulsed laser deposition and a post-annealing process …
Effect of annealing temperature on β-Ga2O3 thin films deposited by RF sputtering method
In this work, Gallium oxide (Ga 2 O 3) films were deposited by RF magnetron sputtering on
quartz and n-type Si (100) substrates at room temperature. The effect of annealing …
quartz and n-type Si (100) substrates at room temperature. The effect of annealing …
The effect of oxygen annealing on characteristics of β-Ga2O3 solar-blind photodetectors on SiC substrate by ion-cutting process
In this work, a high quality (2 ̅ 01) β-Ga 2 O 3 single-crystalline film was transferred to the
4H-SiC substrate by ion-cutting technique, on which the metal-semiconductor-metal (MSM) …
4H-SiC substrate by ion-cutting technique, on which the metal-semiconductor-metal (MSM) …
Au ion irradiation induces ultralow thermal conductivity in GaN
W Yan, Y Xue, W Zhou, Y Wang, H Guo, H Yang… - Applied Physics …, 2024 - pubs.aip.org
Gallium nitride (GaN) is widely considered as a crucial semiconductor for the nuclear
industry and space explorations due to its superior radiation hardness. Despite extensive …
industry and space explorations due to its superior radiation hardness. Despite extensive …
[HTML][HTML] Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study
The crystallographic structure of thin Ga 2 O 3 layers grown by metal–organic vapour phase
epitaxy on Al 2 O 3 substrate was analyzed by Rutherford Backscattering Spectrometry …
epitaxy on Al 2 O 3 substrate was analyzed by Rutherford Backscattering Spectrometry …
Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers
Y Yu, R Guo, Y Xu, J Gao, Z Yang, M Gong… - Journal of Alloys and …, 2024 - Elsevier
Considering the future applications of the ultra-wide bandgap semiconductor β-Ga 2 O 3 in
high-performance electronic devices and aerospace, the effects of low fluence 212 MeV Ge …
high-performance electronic devices and aerospace, the effects of low fluence 212 MeV Ge …
How to recognize the universal aspects of Mott criticality?
In this paper we critically discuss several examples of two-dimensional electronic systems
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
Effect of biased field rings to improve charge removal after heavy-ion strikes in vertical geometry β-Ga2O3 rectifiers
In this study, the response to a heavy-ion strike and the resulting single effect burnout on
beta-Ga 2 O 3 Schottky diodes with biased field rings is investigated via TCAD. The model …
beta-Ga 2 O 3 Schottky diodes with biased field rings is investigated via TCAD. The model …
[HTML][HTML] Improved-Performance Amorphous Ga2O3 Photodetectors Fabricated by Capacitive Coupled Plasma-Assistant Magnetron Sputtering
Y Liu, C Peng, C Liu, C Yu, J Guo, Y Chang, Y Zhao - Coatings, 2024 - mdpi.com
Ga2O3 has received increasing interest for its potential in various applications relating to
solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based …
solar-blind photodetectors. However, attaining a balanced performance with Ga2O3-based …