As the nanotechnology rose to the surface, single electron transistor (SET) was invented. In
contrast to the well-known response of MOS current, SET current has peaks at certain gate …

Based on both the IV characteristics of single-electron transistors and the MOS digital
integrated circuit design concept, a good combination of single-electron transistors with …

As a solution to the high speed, ultralow power, and extremely compact ADC circuit block, a
complementary single-electron transistor (SET)/CMOS hybrid amplifier-based analog-to …

Performances and energy efficiencies of various single-electron transistor-based (SET-
based) binary full adders (FAs) are comparatively investigated with optimization of device …

Complex logic functions based on cascading quantum wires (QWs) defined in a
GaAs/AlGaAs-based two-dimensional electron gas by electron-beam lithography and wet …

The performance and the power consumption of single-electron transistor (SET) technology-
based ultra-energy-efficient signal processing circuits are compared based on the SPICE …

In this work, we simulated and modeled silicon quantum dot based single electron transistor
(SET). We simulated the device using non-equilibrium Green's function (NEGF) formalism in …

Cubic silicon in bulk form has changed the modern landscape of electronics and electro-
optics. The physical and chemical properties of Si are perhaps the best understood of any …

Single electron devices have specific characteristics and properties, particularly the
existence of periodic Coulomb blockade oscillations, a high charge sensitivity and an …

Ultra-energy-efficient analog-to-digital converters (ADCs) based on single-electron transistor
(SET)/complementary metal-oxide-semiconductor (CMOS) hybrid technology are proposed …