Multifunctional irradiation-induced defects for enhancing thermoelectric properties of scandium nitride thin films

D Rao, O Chowdhury, AIK Pillai… - ACS Applied Energy …, 2022 - ACS Publications
Scandium nitride (ScN) is an emerging rocksalt indirect bandgap semiconductor with the
potential to overcome some of the limitations of traditional wurtzite III (A)-nitride …

Effects of adatom mobility and Ehrlich–Schwoebel barrier on heteroepitaxial growth of scandium nitride (ScN) thin films

D Rao, B Biswas, S Acharya, V Bhatia, AIK Pillai… - Applied Physics …, 2020 - pubs.aip.org
Scandium nitride (ScN) is an emerging rock salt indirect bandgap semiconductor and has
attracted significant interest in recent years for thermoelectric energy conversion, as a …

Nitrogen effects on structure, mechanical and thermal fracture properties of CrN films

Y He, K Gao, H Yang, X Pang, AA Volinsky - Ceramics International, 2021 - Elsevier
In this research, reactive pulsed dc magnetron sputtering with different Ar/N 2 gas flow ratios
was used to deposit CrN films with three growth structures on Si substrates. The phase …

Scandium nitride as a gateway III‐nitride semiconductor for both excitatory and inhibitory optoelectronic artificial synaptic devices

D Rao, AIK Pillai, M Garbrecht… - Advanced Electronic …, 2023 - Wiley Online Library
Traditional computation based on von Neumann architecture is limited by time and energy
consumption due to data transfer between the storage and the processing units. The von …

Environmental stability and ageing of ScN thin films from XPS Ar+ depth profiling

S Cichoň, J More-Chevalier, UD Wdowik… - Applied Surface …, 2024 - Elsevier
A basic knowledge on chemical stability and reactivity of a wide band gap ScN
semiconductor in the presence of air atmosphere, where O 2 and H 2 O represent the main …

[HTML][HTML] Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure

MS Haseman, BA Noesges, S Shields, JS Cetnar… - APL Materials, 2020 - pubs.aip.org
We have studied the optical band and defect transitions of ScN, a group IIIB transition metal
nitride semiconductor with electronic and optoelectronic applications. Recent works have …

Detailed study of reactively sputtered ScN thin films at room temperature

S Chowdhury, R Gupta, P Rajput, A Tayal, D Rao… - Materialia, 2022 - Elsevier
To contemplate an alternative approach for the minimization of diffusion at high temperature,
present findings impart viability of room-temperature deposited reactively sputtered ScN thin …

Quasiclassical Anderson transition and thermally activated percolative charge transport in single-crystalline ScN

D Rao, DP Panda, AIK Pillai, A Tayal, M Garbrecht… - Physical Review B, 2024 - APS
Quasiclassical Anderson transition (QAT) represents the crossover from metallic to activated
conduction in heavily doped highly compensated semiconductors (HDHCSs) due to large …

Demonstration of compensated n-type scandium nitride Schottky diodes

D Rao, S Acharya, B Saha - Journal of Physics D: Applied …, 2023 - iopscience.iop.org
Scandium nitride (ScN) is an emerging group III-B transition metal pnictide and has been
studied extensively for its thermoelectric properties, as interlayers for defect-free GaN …

[HTML][HTML] Lattice and electronic structure of ScN observed by angle-resolved photoemission spectroscopy measurements

HA Al-Atabi, X Zhang, S He, Y Chen… - Applied Physics …, 2022 - pubs.aip.org
Scandium nitride (ScN) has recently attracted much attention for its potential applications in
thermoelectric energy conversion, as a semiconductor in epitaxial metal/semiconductor …