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Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
GaN-based power high-electron-mobility transistors on Si substrates: From materials to devices
N Wu, Z ** effect in AlGaN/GaN high-electron-
mobility transistors based on the pulsed current–voltage characterization, drain voltage …
mobility transistors based on the pulsed current–voltage characterization, drain voltage …
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer
Y Zhang, L Xu, Y Gu, H Guo, H Jiang… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
A comprehensive study on dynamic characteristics of GaN MISHEMT with a 5nm-thick in-situ
SiN x dielectric is presented. Effects of both negative and positive gate bias on threshold …
SiN x dielectric is presented. Effects of both negative and positive gate bias on threshold …