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Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements
The temperature dependent transport characteristics of Pd/n-GaSb: Te Schottky contacts
with low and saturating reverse current are investigated by means of current–voltage …
with low and saturating reverse current are investigated by means of current–voltage …
Symmetry adapted impurity modes in as grown n-type GaP: X and GaSb: X (X= S, Se and Te)
DN Talwar - Computational Materials Science, 2022 - Elsevier
A comprehensive average-t-matrix Green's function (ATM-GF) theory is used, in the
framework of a realistic rigid-ion-model, to simulate the symmetry induced vibrational modes …
framework of a realistic rigid-ion-model, to simulate the symmetry induced vibrational modes …
Electrical behavior of MBE grown interfacial misfit GaSb/GaAs heterostructures with and without te-doped interfaces
A detailed study of interface states in interfacial misfit (IMF) grown GaSb on GaAs substrates
is presented. Two types of structures, namely, uncompensated and Te compensated, are …
is presented. Two types of structures, namely, uncompensated and Te compensated, are …