Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

Long before the advent of nanofabrication and quantum-effect devices, the technological
limitations imposed by polycrystalline, multiphase and thermally unstable contacts to III-V …

The formation of the Schottky barrier height (SBH) is a complex problem because of the
dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface …

An introduction to the physical principles and operational characteristics of high-speed
semiconductor devices is presented. Consideration is given to materials and technologies …

We review recent work in the application of Auger and X-ray photoelectron diffraction at high
electron kinetic energies to the problem of structure determination in ultrathin epitaxial …

accepted 11 January 1990) During the past decade, nonequilibrium techniques have been
developed for the growth of epitaxial semiconductors, insulators, and metals which have led …

This review presents an overview on the recent progress achieved in the epitaxial growth of
Ni and Co silicides on Si (111) by UHV deposition techniques. While focusing on the …

Epitaxial silicides belong to a special class of silicides which exhibit a definite orientation
relationship with respect to the silicon substrate. A silicide is expected to grow epitaxially on …

Under certain conditions electrons in a semiconductor become much hotter than the
surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer …

Abstract Single crystal CoSi 2 and NiSi 2 structures fabricated on silicon possess the most
perfect metal-semiconductor interfaces presently available. They represent the best model …